Quantum Well LED Resonant Cavity for Wavelength Stability

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Solution Overview

Problem

Conventional light-emitting diodes (LEDs) experience a shift in emission wavelength as electric current changes, affecting color stability due to internal electric fields and asymmetric atom charges during gallium nitride growth on sapphire substrates.

Innovation Solution

A semiconductor device with a quantum well structure comprising a pair of barrier layers and active layers made of Group 13 elements with different concentrations, integrated within a resonant cavity defined by reflection units, which helps stabilize the wavelength and maintain color quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional gallium nitride growth on sapphire substrate is used, then LED structure is formed, but internal electric field causes wavelength shift and poor color stability

Engineering Contradiction:
Improvecolor stabilityVSAvoidwavelength shift
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the compositional parameters of the active layer by incorporating Group 13 elements (such as indium, aluminum) with different concentrations into the gallium nitride structure. This modifies the bandgap and reduces the internal electric field effect, thereby minimizing wavelength shift and improving color stability under varying current conditions.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite semiconductor material system by combining gallium nitride with other Group 13 element compounds in the active layer. This composite structure allows tuning of electrical and optical properties to reduce the quantum confined Stark effect and improve wavelength stability while maintaining high efficiency.

Inventive Principle:
Principle #40Composite materials

2Reliability

If Group 13 elements with different concentrations are incorporated in active layers, then wavelength shift is reduced and color stability is improved, but device structure complexity increases

Engineering Contradiction:
Improvecolor stabilityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent divides the active region into multiple quantum well structures, each containing Group 13 elements at different concentrations. This segmentation allows independent optimization of each layer's composition to control wavelength and reduce internal field effects, achieving color stability through a structured approach rather than a single complex layer.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces wavelength shift and enhances color stability of LEDs by maintaining high optical output and internal quantum efficiency even at varying currents, outperforming traditional commercial and pre-well structure LEDs.

Implementation Method 1

The first active layer and the second active layer respectively include Group 13 elements of different concentrations... beneficial to converging the wavelength shift of the light-emitting diodes and maintaining the color quality

Methodology Applied
Scientific EffectQuantum confined Stark effect reduction:

Implementation Method 2

The second reflection unit is disposed on the second type semiconductor layer and defines a resonant cavity with the first reflection unit... conducive to limit the wavelength shift of the light-emitting diodes

Methodology Applied
Scientific EffectOptical resonance: Resonance

Data Source

PatentUS20240222552A1Semiconductor element, electronic device comprising semiconductor element, and semiconductor chip
Publication Date: 2024.07.04 INNOLUX CORP
  • US20240222552A1 patent drawing
  • US20240222552A1 patent drawing
  • US20240222552A1 patent drawing

AI summary

A semiconductor device is disclosed. The quantum well structure of the semiconductor element is disposed between a first type semiconductor layer and a second type semiconductor layer, and includes a pair of barrier layers and a first active layer and a second active layer disposed between the pair of barrier layers. The first active layer and the second active layer respectively include a group 13 elements of different concentrations. The first reflection unit is disposed under the first type semiconductor layer. The second reflection unit is disposed on the second type semiconductor layer, and defines a resonant cavity with the first reflection unit. The quantum well structure is arranged in the resonant cavity.