Multiple Quantum Well LED Structure for Strain and Carrier Balance
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Solution Overview
Problem
Current semiconductor optoelectronic devices, particularly light-emitting diodes, face challenges in achieving optimal light-emitting power and efficiency due to limitations in material strain and thickness ratios of well and barrier layers, which affect internal quantum efficiency and forward voltage.
Innovation Solution
The semiconductor device incorporates a light-emitting structure with multiple quantum well stacks composed of well and barrier layers made from quaternary semiconductor materials like InGaAsP or InGaNAs, with specific strain conditions and thickness ratios to enhance carrier distribution and recombination, and includes confinement and cladding layers to improve light-emitting performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the thickness ratio of well and barrier layers is increased to enhance light-emitting power, then the light-emitting power is improved, but the internal quantum efficiency deteriorates due to material strain limitations
Solution Approach 1:
The patent applies parameter changes by precisely controlling the thickness ratios of well layers and barrier layers in the multiple quantum well structure. By optimizing specific thickness parameters (well layer thickness and barrier layer thickness) and their ratios, the invention achieves enhanced light-emitting power while maintaining acceptable internal quantum efficiency, resolving the contradiction between power output and efficiency
Solution Approach 2:
The patent employs composite materials by using quaternary semiconductor materials (such as InGaAsP or InAlAs) for both well layers and barrier layers. This composite material approach allows for tailored bandgap engineering and strain management, enabling the structure to achieve high light-emitting power while maintaining good internal quantum efficiency through material composition optimization
2Reliability
If the material strain is increased to improve carrier distribution, then the carrier distribution is enhanced, but the forward voltage increases
Solution Approach 1:
The patent applies local quality by creating different strain conditions in different regions of the device. The multiple quantum well structure has localized strain distribution where well layers and barrier layers experience different strain states. This localized strain management optimizes carrier distribution in the active region while controlling the overall forward voltage through spatially varying material properties
Solution Approach 2:
The patent uses parameter changes by adjusting material composition parameters (indium content, aluminum content) and structural parameters (layer thickness) to control strain magnitude. By changing these parameters, the invention achieves improved carrier distribution while managing forward voltage through precise strain engineering in the quantum well structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light-emitting power, internal quantum efficiency, and forward voltage, leading to improved optical-electrical characteristics and broader application in fields like illumination, medical devices, and communication systems.
Implementation Method 1
The light-emitting structure emits an incoherent light having a peak wavelength in a range of 700 nm to 3000 nm
Data Source
AI summary
A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The first semiconductor structure includes a first confinement layer and a first cladding layer adjacent to the first confinement layer. The second semiconductor structure is located on the first semiconductor structure and includes a second confinement layer. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The first confinement layer and the second confinement layer are adjacent to the light emitting structure. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material including InGaAsP, AlGaInAs or InGaNAs.