Quantum Well Scintillator Structure for Higher Emission Intensity
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Solution Overview
Problem
Conventional scintillators with InGaN/GaN quantum well layers have low light emission intensity and efficiency, leading to reduced detection sensitivity and increased noise, as well as residual electrons that impede response speed and accuracy in measuring devices like mass spectrometers.
Innovation Solution
A scintillator structure featuring a GaN layer, alternately stacked InGaN and GaN quantum well layers, and a conductive layer with an oxygen-containing layer in between, which enhances light emission intensity and response speed by efficiently converting incident electrons into light and controlling electron retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a conventional InGaN/GaN quantum well layer structure is used, then the scintillator can convert incident electrons into light, but the light emission intensity is low and conversion efficiency is limited
Solution Approach 1:
The patent introduces an oxygen-containing layer at the specific location between the quantum well structure and conductive layer to improve electron-to-light conversion efficiency locally. This localized modification targets the interface region where electron injection occurs, enhancing the conversion process without altering the entire scintillator structure.
Solution Approach 2:
The patent combines InGaN/GaN quantum well layers with an oxygen-containing layer to create a composite structure. This composite material approach integrates the light-emitting properties of InGaN/GaN with the electron-injection enhancement provided by the oxygen-containing layer, achieving superior conversion efficiency.
2Reliability
If conventional scintillator structures are used, then light emission can be generated, but residual electrons remain in the scintillator causing repulsion of subsequently incident electrons and reducing detection sensitivity
Solution Approach 1:
The patent extracts or removes residual electrons from the scintillator structure by introducing the oxygen-containing layer, which appears to facilitate electron extraction or prevent electron accumulation. This eliminates the harmful repulsion effect on subsequently incident electrons.
Solution Approach 2:
The oxygen-containing layer acts as an intermediary between the quantum well structure and the conductive layer, mediating the interaction between incident electrons and the scintillator material. This intermediary layer prevents harmful electron accumulation while maintaining efficient electron-to-light conversion.
3Speed
If conventional scintillator structures are used, then the scintillator can detect charged particles, but the response speed decreases due to residual electrons causing delayed light emission
Solution Approach 1:
The patent removes residual electrons that cause delayed light emission by introducing the oxygen-containing layer. This extraction of harmful electrons eliminates the source of delayed emission, thereby improving response speed and preventing information loss.
Solution Approach 2:
The oxygen-containing layer enables incident electrons to pass through more efficiently without being trapped or causing delayed emission. This 'skipping' effect allows electrons to complete the conversion process rapidly, improving response speed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved scintillator structure achieves higher light emission intensity and faster response times, enabling better detection sensitivity and dynamic range, particularly in mass spectrometers and electron microscopes, by efficiently converting incident electrons into light and minimizing residual electron effects.
Implementation Method 1
a quantum well structure provided on the incident side with respect to the GaN layer; in the quantum well structure, a plurality of light emitting layers containing InGaN and a plurality of barrier layers containing GaN are alternately stacked
Implementation Method 2
The scintillator has a structure that emits light in response to incidence of a charged particle beam. Light emitted from the scintillator due to incident electrons
Implementation Method 3
When such electrons remain in the scintillator, the electrons repel the subsequently incident electrons, and the amount of electrons to be incident is reduced
Implementation Method 4
Light emitted from the scintillator due to incident electrons is converted into an electric signal by a light receiving element such as a photoelectric tube
Data Source
AI summary
Provided are a scintillator and the like capable of improving emission intensity. A scintillator (S) comprises a sapphire substrate (6), a GaN layer (4) that is provided on the incident side to the sapphire substrate (6) and includes GaN, a quantum well structure (3) provided on the incident side to the GaN layer (4), and a conductive layer (2) provided on the incident side to the quantum well structure (3), wherein a plurality of emitting layers (21) including InGaN and a plurality of barrier layers (22) including GaN are alternatively stacked in the quantum well structure (3), and an oxygen-containing layer (23) including oxygen is provided between the quantum well structure (3) and the conductive layer (2).