Quantum Well Semiconductor Device for Low Power Logic
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Solution Overview
Problem
The scaling down of MOS devices leads to serious issues such as short channel effects, increased power consumption, and heat dissipation problems due to the limitations of conventional bulk silicon CMOS technology and System in a Package (SIP) structures, which hinder further performance improvements and integration.
Innovation Solution
A semiconductor device with a quantum well structure and a tunneling barrier between the source and channel regions, utilizing materials with different energy bands, enables efficient electric charge tunneling for high-speed current formation and low power consumption, while also addressing heat dissipation through innovative substrate and gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the channel size is reduced to improve integration and performance, then the drive current and integration increase, but the short channel effect becomes more serious and device reliability deteriorates
Solution Approach 1:
The patent changes the material parameters of the channel region by introducing a quantum well structure with specific width (5-20 nm) and depth, which modifies the energy band structure and carrier transport properties. This allows maintaining high drive current while suppressing short channel effects through quantum confinement effects.
Solution Approach 2:
The patent employs a composite quantum well structure within the channel region, combining different semiconductor materials with different bandgaps to create a heterostructure. This composite approach enables simultaneous achievement of high carrier mobility for drive current and effective potential barriers for short channel effect suppression.
2Length of moving object
If the gate oxide thickness is reduced to improve scaling, then the device size decreases, but dielectric current leakage and tunneling effects increase causing power consumption to rise
Solution Approach 1:
The patent introduces a quantum well structure with optimized width and depth parameters in the channel region, which changes the energy band alignment and creates effective potential barriers. This reduces gate-induced leakage currents and suppresses tunneling effects even with thin gate oxide, thereby lowering power consumption.
3Productivity
If multiple chips are integrated in a System in a Package to improve functionality and reduce volume, then the integration density increases, but heat dissipation becomes more difficult due to increased heat generation and poor thermal conduction
Solution Approach 1:
The patent introduces a quantum well structure with specific dimensional parameters in the channel region, which modifies carrier transport properties and reduces power consumption through enhanced tunneling efficiency. The reduced power consumption directly translates to lower heat generation, addressing thermal management challenges in high-density integrated packages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves ultralow working voltage, reduced sub-threshold slope, increased drive current, and minimized reverse current leakage, effectively addressing power consumption and heat dissipation challenges, and integrates logic and memory functions in a single transistor.
Implementation Method 1
a channel region on the semiconductor substrate, the channel region including a quantum well structure
Implementation Method 2
utilizing materials with different energy bands, enables efficient electric charge tunneling for high-speed current formation
Data Source
AI summary
A semiconductor device, which comprises: a semiconductor substrate; a channel region on the semiconductor substrate, said channel region including a quantum well structure; a source region and a drain region on the sides of the channel region; a gate structure on the channel region; wherein the materials for the channel region, the source region and the drain region have different energy bands, and a tunneling barrier structure exists between the source region and the channel region.