Quantum Well Light Emitter for Wide Electron Beam Voltage Range
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Solution Overview
Problem
Existing light emitters in electron beam detectors face a challenge in maintaining high light conversion efficiency across a wide range of acceleration voltages, with efficiency dropping for both low and high acceleration voltages due to the thickness of the multiple quantum well structure.
Innovation Solution
A light emitter design with varying barrier layer thicknesses, where the barrier layer closest to the electron incident surface is thinner than those further away, allowing for efficient light conversion across different penetration depths of electron beams.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the multiple quantum well structure is thickened to improve light conversion efficiency for high acceleration voltage electron beams, then light conversion efficiency for high acceleration voltage is improved, but light conversion efficiency for low acceleration voltage electron beams is reduced
Solution Approach 1:
The patent applies local quality by making the barrier layer thickness non-uniform within the multiple quantum well structure. Specifically, the barrier layer thickness increases from the electron incident surface toward the opposite surface, creating different local properties in different regions. This allows shallow-penetrating low-voltage electrons to efficiently reach quantum wells in the shallower regions, while deep-penetrating high-voltage electrons can reach quantum wells in the deeper regions, thereby resolving the contradiction between optimizing for high and low acceleration voltages simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves light conversion efficiency from low to high acceleration voltages by ensuring quantum wells capture electrons effectively at both shallow and deep penetration levels, maintaining efficiency regardless of voltage.
Implementation Method 1
the light is generated by emission recombination (cathodoluminescence) in the well layer
Data Source
AI summary
A light emitter is a light emitter for converting incident electrons into light, and includes a multiple quantum well structure for generating the light by incidence of the electrons, and an electron incident surface provided on the multiple quantum well structure. A certain barrier layer included in a plurality of barrier layers constituting the multiple quantum well structure is thicker than another barrier layer included in the plurality of barrier layers and located on the electron incident surface side with respect to the certain barrier layer.