Quantum Wire Resonant Tunneling Transistor for Low Power Scaling
Solution Overview
Problem
Traditional MOSFET scaling has reached economic limitations, and there is a need for a low-cost, high-performance transistor to meet increasing computing demands, as device miniaturization benefits have diminished.
Innovation Solution
A semiconductor transistor device utilizing metal quantum wires in emitter, base, and collector regions with barrier regions, formed by ion implantation, enabling resonant tunneling and efficient current transmission with a simpler structure and reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If traditional MOSFET scaling is continued, then device miniaturization benefits are achieved, but manufacturing cost increases and economic justification diminishes
Solution Approach 1:
The patent changes the fundamental operating principle from classical drift-diffusion transport to quantum resonant tunneling transport. This parameter change in the transport mechanism enables device functionality at scaled dimensions without proportionally increasing manufacturing complexity, as the quantum wire structure can be formed through established semiconductor fabrication techniques modified for quantum confinement.
Solution Approach 2:
The patent replaces the mechanical/electrical field-based MOSFET operation with quantum mechanical tunneling effects. By substituting the classical transport mechanism with quantum resonant tunneling through engineered barriers, the device achieves new functionality that is not constrained by traditional scaling limitations and associated cost increases.
2Length of moving object
If traditional MOSFET scaling is continued, then device miniaturization is achieved, but device complexity increases
Solution Approach 1:
The patent segments the semiconductor structure into distinct quantum wire regions separated by barrier layers. This segmentation creates discrete quantum confinement zones that define specific energy states, enabling controlled resonant tunneling. The segmented structure simplifies the device operation principle compared to complex scaled MOSFETs by reducing it to quantum well formation and barrier tunneling.
Solution Approach 2:
The patent employs composite material structures combining semiconductor regions with metal quantum wires and barrier materials. This composite approach creates the necessary quantum confinement and tunneling barriers while maintaining manufacturability through established material systems, avoiding the need for entirely new complex material combinations.
3Length of moving object
If traditional MOSFET scaling is continued, then smaller dimensions are achieved, but power consumption increases
Solution Approach 1:
The patent extracts the essential transport function from complex scaled MOSFET structures and isolates it to quantum resonant tunneling through simplified barrier regions. By taking out only the necessary tunneling barriers and quantum wire regions, the device eliminates parasitic resistances and capacitive effects present in scaled MOSFETs, thereby reducing power consumption.
Solution Approach 2:
The patent utilizes the periodic nature of quantum resonant tunneling where current flows only at specific energy states matching the quantum well levels. This periodic conduction characteristic enables ultra-low power operation as the device naturally blocks current except during resonant conditions, reducing average power consumption compared to continuously conducting scaled MOSFETs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high performance with lower power consumption and manufacturing costs, enabling higher density and reliability with improved current switching capabilities and reduced power supply voltage requirements.
Implementation Method 1
A semiconductor transistor device utilizing metal quantum wires in emitter, base, and collector regions with barrier regions, formed by ion implantation, enabling resonant tunneling and efficient current transmission
Implementation Method 2
formed by ion implantation
Data Source
AI summary
A semiconductor transistor device includes an emitter region that includes a plurality of metal quantum wires and is connected to an emitter terminal, a base region that includes a plurality of metal quantum wires and is connected to a base terminal, a collector region comprising a plurality of metal quantum wires and is connected to a collector terminal, an emitter barrier region between the emitter region and the base region, and a collector barrier region between the collector region and the base region.