Quartz Annular Member Silicon Content for Etching Uniformity
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Solution Overview
Problem
In plasma etching processes, the edge portions of masks on substrates experience insufficient formation of protective films due to high selectivity ratios of quartz, leading to non-uniform etching and increased mask consumption.
Innovation Solution
An annular member made of quartz with a silicon content between 2.5% and 10% by weight is used around the pedestal in a plasma processing apparatus, releasing silicon ions to form a protective film on the edge portions of the mask, ensuring uniform etching across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a quartz annular member is used with high selectivity ratio, then etching selectivity is improved, but mask edge portion protective film formation is insufficient leading to non-uniform etching
Solution Approach 1:
The invention changes the chemical composition parameter of the annular member by controlling silicon content within 2.5-10% by weight. This parameter modification enables the material to release silicon ions during plasma etching, forming protective films on mask edge portions while maintaining high etching selectivity, thus resolving the contradiction between etching uniformity and protective film formation.
Solution Approach 2:
The annular member is constructed as a composite material containing quartz and silicon in specific proportions. This composite structure combines the high selectivity of quartz with the protective film-forming capability of silicon, allowing simultaneous achievement of both etching uniformity and reliable mask edge protection.
2Quantity of substance
If pure quartz is used for the annular member, then material purity is improved, but silicon ion release is insufficient leading to increased mask consumption
Solution Approach 1:
The invention modifies the compositional parameter of the annular member by incorporating controlled amounts of silicon (2.5-10% by weight) into the quartz structure. This parameter change enables continuous release of silicon ions during plasma etching, which deposit on mask edge portions to form protective films, thereby reducing mask consumption and increasing mask remaining amount.
Solution Approach 2:
The invention converts the potential harm of silicon contamination into a beneficial protective mechanism. By intentionally incorporating silicon into the annular member, the silicon ions released during etching form protective films on the mask, transforming what would be considered contamination into a protective function that reduces mask consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of etching and reduces mask consumption by forming a protective film on the edge portions, maintaining the integrity of the mask and improving etching characteristics.
Implementation Method 1
In plasma etching processes, the edge portions of masks on substrates experience insufficient formation of protective films due to high selectivity ratios of quartz
Implementation Method 2
releasing silicon ions to form a protective film on the edge portions of the mask
Data Source
AI summary
An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.