Artificial Quartz Crystal Growth Axis Alignment

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Solution Overview

Problem

Existing methods for growing large artificial quartz crystals face challenges with axis misalignment due to the difficulty in aligning the axes of multiple quartz crystal substrates during the growth process.

Innovation Solution

Applying pressure to substantially rectangular-parallelepiped-shaped quartz crystal substrates that are aligned in the X-axis direction, using a jig with elastic members to maintain contact and prevent misalignment during hydrothermal synthesis, ensuring the substrates grow with aligned crystallographic axes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If multiple quartz crystal substrates are directly joined together to form a seed for growing large artificial quartz crystals, then the size of the artificial quartz crystal can be increased, but axis misalignment occurs between the substrates

Engineering Contradiction:
Improvesize of artificial quartz crystalVSAvoidaxis alignment
Core Design Contradiction:
Volume of moving objectVSManufacturing precision

Solution Approach 1:

The patent applies preliminary action by pre-aligning the crystallographic axes of multiple quartz crystal substrates in the X-axis direction before joining them together to form the seed. This preliminary alignment ensures that when the substrates are joined, their axes remain aligned, preventing misalignment during the subsequent growth process and enabling the production of large artificial quartz crystals with precise axis alignment

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If quartz crystal substrates are joined together during growth, then axis misalignment is prevented, but the complexity of the growth process increases

Engineering Contradiction:
Improveaxis alignmentVSAvoidgrowth process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent simplifies the growth process by pre-aligning and joining the quartz crystal substrates before the growth process begins. This preliminary preparation eliminates the need for complex real-time alignment mechanisms during growth, reducing process complexity while maintaining precise axis alignment throughout the crystal development

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively prevents axis misalignment, allowing for the growth of large artificial quartz crystals with aligned axes, enhancing the productivity and accuracy of quartz crystal production.

Implementation Method 1

applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped quartz crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the quartz crystal substrates aligned with each other

Methodology Applied
Scientific EffectPressure: Pressure Increase

Implementation Method 2

causing the at least two quartz crystal substrates to grow an artificial quartz crystal in a state where the pressure is being applied

Methodology Applied
Scientific EffectHydrothermal synthesis: Crystallisation

Data Source

PatentUS9976232B2Artificial quartz crystal growth method
Publication Date: 2018.05.22 MURATA MFG CO LTD
  • US9976232B2 patent drawing
  • US9976232B2 patent drawing
  • US9976232B2 patent drawing

AI summary

An artificial quartz crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped quartz crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the quartz crystal substrates aligned with each other, and causing the at least two quartz crystal substrates to grow an artificial quartz crystal in a state where the pressure is being applied.