Quartz Dome Gas Injection for Epitaxial Film Uniformity
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Solution Overview
Problem
Existing gas delivery apparatuses for semiconductor epitaxy processes suffer from non-uniform film deposition due to uneven gas flow characteristics, limiting the type and number of precursor species that can be effectively introduced.
Innovation Solution
A gas delivery apparatus featuring a quartz dome with multiple holes for gas injection, coupled with gas delivery tubes and a flange plate, which allows for a combination of laminar cross-flow and top-down gas delivery, enhancing gas concentration and uniformity on the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If cross-flow gas delivery apparatus is used, then gas can be injected into the processing chamber, but center to edge non-uniformities of the deposited film result due to uneven gas flow characteristics
Solution Approach 1:
The gas delivery system is segmented into multiple injection points (first and second gas injection assemblies) positioned at different locations within the processing chamber. This segmentation allows independent control of gas flow to different regions, enabling correction of center-to-edge non-uniformities by adjusting flow distribution across multiple zones rather than relying on a single gas delivery location
Solution Approach 2:
Different regions of the processing chamber are provided with tailored gas flow characteristics through locally positioned injection assemblies. The first gas injection assembly targets one region while the second assembly targets another region, allowing each zone to receive optimized gas flow conditions specific to its location, thereby achieving uniform film deposition across the entire substrate surface
2Adaptability or versatility
If cross-flow gas delivery apparatus is used, then gas flow can be maintained, but the type and number of precursor species that may be introduced are limited
Solution Approach 1:
The gas delivery system is designed with multi-functional capability to introduce multiple types of precursor species simultaneously through separate injection assemblies. Each injection assembly can handle different gas types, and the system architecture supports versatile precursor introduction without requiring fundamentally different delivery mechanisms, thereby achieving adaptability while controlling complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves deposition uniformity by increasing gas concentration at the substrate surface, reducing processing time, and preventing premature gas species cracking, resulting in a more uniform crystal structure and increased gas utilization.
Implementation Method 1
allows for a combination of laminar cross-flow and top-down gas delivery
Implementation Method 2
a reflector plate may be coupled to the chamber body. The reflector plate may be disposed between the light transmissive member and the flange plate
Data Source
AI summary
Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.