Quartz Reactor Casing Assembly with Diffusion-Bonded Cooling
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Solution Overview
Problem
The existing method of welding concentric quartz tubes for cooling enclosures in epitaxial deposition reactors is inefficient and costly, leading to structural damage and high procurement issues.
Innovation Solution
A casing assembly comprising a quartz inner and outer casing connected by flanges with integrated fluid inlets and outlets, utilizing a liquid-tight interspace for cooling fluid circulation, and employing diffusion welding techniques to ensure structural integrity and ease of manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If welding is used to join concentric quartz tubes, then structural integrity is achieved, but manufacturing reliability deteriorates due to artisanal process and unpredictable yield
Solution Approach 1:
The patent replaces the mechanical welding process with a diffusion bonding process that occurs during the epitaxial growth itself. The quartz tubes are joined through atomic diffusion at elevated temperatures in a controlled atmosphere, eliminating the need for artisanal welding operations and achieving both structural integrity and manufacturing reliability.
Solution Approach 2:
The patent utilizes changes in temperature and atmospheric parameters during the epitaxial growth process to enable diffusion bonding of quartz tubes. By controlling the thermal and chemical environment, the quartz materials diffuse into each other at the joint interface, creating a strong bond without requiring traditional welding techniques.
2Strength
If welding is used to join quartz tubes, then structural integrity is achieved, but manufacturing cost increases due to irreparable damage and low yield
Solution Approach 1:
The patent replaces the mechanical welding process with a diffusion bonding process that occurs during the epitaxial growth itself. The quartz tubes are joined through atomic diffusion at elevated temperatures in a controlled atmosphere, eliminating the need for artisanal welding operations and achieving both structural integrity and manufacturing reliability.
Solution Approach 2:
The patent utilizes changes in temperature and atmospheric parameters during the epitaxial growth process to enable diffusion bonding of quartz tubes. By controlling the thermal and chemical environment, the quartz materials diffuse into each other at the joint interface, creating a strong bond without requiring traditional welding techniques.
3Device complexity
If a single quartz tube design is used, then simplicity is maintained, but cooling efficiency deteriorates due to insufficient heat dissipation
Solution Approach 1:
The patent divides the single quartz tube enclosure into two concentric quartz tubes, creating an annular interspace between them. This segmentation allows cooling fluid to flow through the interspace, significantly improving heat dissipation from the reaction chamber while maintaining the simplicity of the overall enclosure design.
Solution Approach 2:
The patent implements a nested structure where one quartz tube is placed inside another, with the cooling fluid flowing in the interspace between them. This nested configuration maximizes the cooling surface area and efficiency while keeping the enclosure design relatively simple and compact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a cost-effective and efficient cooling system that maintains structural integrity at high temperatures, reducing manufacturing costs and improving the reliability of epitaxial deposition reactors.
Implementation Method 1
a liquid-tight interspace between them... directing a cooling fluid in said liquid-tight interspace
Implementation Method 2
an induction heating system, for example comprising an induction coil wrapped around the reaction chamber... graphite features high susceptivity and will heat up effectively under an alternating electromagnetic field
Data Source
Figure 1a~1b
Figure 2
Figure 3a~3b
AI summary
A casing assembly (10) for a reaction chamber suitable for the epitaxial deposition of a semiconductor film on a substrate comprising: - An inner casing (100) and an outer casing (150) extending along a longitudinal direction (x); the inner casing being placed coaxially with respect to the outer casing and being at least partly contained therein; and - a first flange (200) and a second flange (250), connecting the inner and the outer casing and defining a liquid-tight interspace; wherein the first flange or the second flange comprises at least one inlet (300) for directing a cooling fluid in said liquid-tight interspace; and the first flange or the second flange comprises at least one outlet (350) for discharging the cooling fluid out of the liquid-tight interspace; the outer casing and/or the inner casing comprising at least one transparent quartz portion (151) and at least one opaque quartz portion (152). A reaction chamber (500) enclosed by said casing assembly and a reactor (1000) employing said reaction chambers.