Quartz Window With Fluid Channels for Uniform Epitaxial Deposition

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional heating methods in semiconductor processing chambers provide localized heating, leading to non-uniform process gas temperatures and subsequent non-uniform deposition on substrates, which can be compensated for by rotating the substrate but results in precursor gas loss and uneven growth rates.

Innovation Solution

A temperature-controlled window component made of transparent quartz with embedded fluid channels is used to control process gas temperature within the semiconductor processing chamber. This window generates thermal energy in the upper volume of the chamber and conditions it as it passes through the fluid channels, providing targeted heating zones for uniform deposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional localized heating methods (lamps, susceptor heaters) are used to control process gas temperature, then heating capability is provided, but non-uniform process gas temperature distribution occurs across the substrate

Engineering Contradiction:
Improveprocess gas temperature uniformityVSAvoiddeposition uniformity
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The heating function is segmented from the substrate support and process gas flow system, and integrated into the window structure itself. The window contains embedded heating elements and fluid channels that divide the heating function into discrete zones, allowing independent temperature control of different regions to achieve uniform process gas temperature across the substrate.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The window acts as an intermediary component between the heat source and the process gas. By embedding heating elements and fluid channels within the window structure, it serves as a mediator that distributes thermal energy uniformly across the process gas before it reaches the substrate, eliminating the non-uniform temperature distribution caused by conventional localized heating methods.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If substrate rotation is used to compensate for non-uniform deposition, then deposition uniformity is improved, but precursor gas loss increases and growth rate non-uniformity persists

Engineering Contradiction:
Improvedeposition uniformityVSAvoidprecursor gas loss
Core Design Contradiction:
Manufacturing precisionVSLoss of substance

Solution Approach 1:

The window performs preliminary temperature conditioning of the process gas before it reaches the substrate. By pre-heating or cooling the gas uniformly across all zones through embedded fluid channels, the deposition process proceeds uniformly without requiring substrate rotation for compensation, thereby preventing precursor gas loss that would otherwise occur during rotation.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The mechanical substrate rotation system is replaced by a thermal field control system embedded in the window. Instead of mechanically rotating the substrate to achieve uniform deposition, the invention uses controlled thermal fields within the window to create uniform process gas temperature distribution, eliminating the need for rotation and its associated precursor gas loss.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The temperature-controlled window ensures more uniform gas activation and deposition across the substrate, reducing operational downtime, increasing production efficiency, and facilitating better cleaning of chamber components.

Implementation Method 1

the first fluid is an infrared radiation absorbing gas or reflecting gas

Methodology Applied
Scientific EffectInfrared radiation absorption: Absorption (EM radiation)

Implementation Method 2

one or more fluid channels formed within the body. The one or more fluid channels are configured to flow a fluid from a first side of the body towards a second side of the body

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250132175A1Actively controlled window for epitaxial deposition process temperature control
Publication Date: 2025.04.24 APPLIED MATERIALS INC
  • US20250132175A1 patent drawing
  • US20250132175A1 patent drawing
  • US20250132175A1 patent drawing

AI summary

A window component, a chamber, and a method of processing substrates are described herein. In one example, a semiconductor process chamber window component comprises a transparent quartz body. The body comprises a top surface, a bottom surface, a central portion disposed near a center axis of the body, and one or more fluid channels formed within the body. The one or more fluid channels are configured to flow a fluid from a first side of the body towards a second side of the body and the first side is disposed opposite the second side.