Quasi-Regular Structures on Semiconductor Radiation Surfaces
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Solution Overview
Problem
Existing methods for producing optoelectronic semiconductor chips face challenges in achieving consistent optical properties due to total internal reflection, which leads to efficiency losses and design limitations, particularly with wet-chemical roughening causing unwanted side effects and dry-chemical etching resulting in fluctuating emission characteristics.
Innovation Solution
The method involves creating quasi-regularly arranged structures at the radiation passage surface of the semiconductor body using dry-chemical or wet-chemical etching, with structures applied or introduced during epitaxial growth or post-processing, allowing for controlled emission characteristics and reduced total internal reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If wet-chemical roughening is used to reduce total internal reflection, then output coupling efficiency is improved, but unwanted side effects and excess roughening occur
Solution Approach 1:
The patent transitions from wet-chemical to dry-chemical etching, changing the chemical process parameters to eliminate liquid handling issues. This parameter change resolves the contradiction by maintaining the ability to reduce total internal reflection while avoiding the harmful side effects of wet-chemical methods such as excess roughening and processing complications
Solution Approach 2:
The patent replaces wet-chemical etching with dry-chemical etching, substituting a mechanical/vapor-phase process for a liquid-phase chemical process. This substitution eliminates the harmful effects associated with wet-chemical methods while preserving the optical coupling benefits
2Object-generated harmful factors
If dry-chemical etching is used to avoid wet-chemical side effects, then harmful factors are reduced, but emission characteristics fluctuate
Solution Approach 1:
The patent incorporates etch stops and controlled etching sequences before final structure formation. These preliminary actions establish precise depth control and prevent over-etching, ensuring consistent emission characteristics while maintaining the advantages of dry-chemical etching
Solution Approach 2:
The patent implements controlled etching processes with monitoring and adjustment mechanisms that provide feedback during the etching sequence. This feedback control ensures that the dry-chemical etching process achieves consistent emission characteristics by preventing fluctuations through real-time process management
3Loss of energy
If structures are introduced to reduce total internal reflection, then energy loss is reduced, but device complexity increases
Solution Approach 1:
The patent divides the etching process into multiple sequential steps with different parameters and objectives. This segmentation allows complex optical structures to be formed through manageable stages, reducing total internal reflection while keeping each individual process step relatively simple and controllable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the homogeneity of electromagnetic radiation emission, reducing fluctuations in brightness across the wafer and between chips, thereby improving output coupling efficiency and design flexibility while minimizing excess roughening and side effects.
Implementation Method 1
a radiation-emitting semiconductor chip that emits electromagnetic radiation, in particular light, during operation
Implementation Method 2
The structures are introduced into the semiconductor body for example by means of dry-chemical or wet-chemical etching
Implementation Method 3
Existing methods for producing optoelectronic semiconductor chips face challenges in achieving consistent optical properties due to total internal reflection
Implementation Method 4
The semiconductor body can be provided for example by epitaxial growth on a substrate
Data Source
AI summary
The invention relates to a method for producing an optoelectronic semiconductor chip comprising the following steps: providing a semiconductor body (1) having a radiation-permeable surface (1a), and introducing structures (2) into the semiconductor body (1) on the radiation-permeable surface (1a), wherein the structures (2) are quasi-regular.