Semiconductor Qubit Layout With Backside Magnetic Drive
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Solution Overview
Problem
Existing quantum computer devices face challenges in efficiently generating an oscillating magnetic field for electron or hole spin-based qubits without inducing spurious signals or excessive heating, and they often experience space overfilling due to the placement of electrical tracks for generating the magnetic field.
Innovation Solution
The device incorporates an electrical track on the back side of the insulating layer, which generates the oscillating magnetic field while minimizing interference and heating, and allows for independent control of the electric potential landscape, with the track configuration optimized to create a strong magnetic field near the qubits and rapidly decrease with distance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Force
If electrical tracks are placed on the front side near qubits to generate oscillating magnetic field, then magnetic field strength near qubits is improved, but space overfilling and electromagnetic interference increase
Solution Approach 1:
The patent moves the electrical track from the front side (same plane as qubits) to the back side of the insulating layer, utilizing the third dimension (depth/layer) to separate the magnetic field generation source from the qubits. This spatial reconfiguration maintains magnetic field effectiveness while reducing electromagnetic interference and spurious signals at the qubit location.
Solution Approach 2:
The device is segmented into distinct functional layers: the front side contains the qubits and gates, while the back side contains the electrical track for magnetic field generation. This segmentation allows independent optimization of each component's performance without mutual interference.
2Productivity
If electrical tracks are placed close to qubits to generate strong magnetic field, then manipulation efficiency is improved, but heating and spurious signals increase
Solution Approach 1:
By relocating the electrical track to the back side of the insulating layer, the patent maintains close proximity for efficient magnetic field coupling while physically separating the heat generation source from the qubit region, thereby reducing thermal impact on the quantum system.
3Measurement precision
If electrical tracks are placed on the front side for qubit control, then control precision is improved, but device complexity and space occupation increase
Solution Approach 1:
The patent utilizes the back side of the insulating layer to place electrical tracks, effectively using the vertical dimension to add control functionality without increasing lateral device footprint or complicating the front side qubit structure.
Solution Approach 2:
The insulating layer serves multiple functions: it provides electrical isolation for the qubits on the front side and simultaneously supports the electrical track for magnetic field generation on the back side. This multi-functionality reduces the need for additional components and simplifies the overall device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces space overfilling around the qubits, limits spurious signals, and allows for precise control of the electric potential, enhancing the manipulation of qubits while maintaining a flexible geometry and reducing electromagnetic interference.
Implementation Method 1
an electrical track, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure
Implementation Method 2
A constant magnetic field B0 is generally applied to the trapping structure, and causes precession of the spin of the electron in question
Implementation Method 3
an oscillating magnetic field can then be applied to this electron (magnetic field BAC, for example, with a frequency in the gigahertz range... This technique, called 'ESR' (Electron Spin Resonance), is commonly used for such electron spin-based qubits on semiconductors
Data Source
AI summary
An electronic device for storing, controlling and manipulating electron or hole spin based semiconductor qubits, the device including an electrically insulating layer and on a front face of the insulating layer, a trapping structure for electrons or holes which includes: a channel portion including at least one layer portion of semiconductor material, as well as a plurality of gates distributed for trapping at least one electron or hole in the channel portion, and on the back side of the insulating layer, an electrical track extending parallel to the insulating layer, for generating an oscillating magnetic field acting on the at least one electron or hole trapped in the trapping structure.