Integrated Qubit Cooling Tunnel Junctions for Cryogenic Heat Control

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Solution Overview

Problem

Existing semiconductor qubit quantum devices face challenges in thermal management, particularly at the qubit scale, requiring improved thermal insulation and cooling while minimizing size impact for scalability.

Innovation Solution

An integrated cooling structure is implemented within or near quantum and control components using superconducting tunnel junctions, such as NS or NIS type, to efficiently cool semiconductor qubits without significantly increasing device size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If an integrated cooling structure with superconducting tunnel junctions is implemented close to quantum components, then thermal management efficiency is improved, but device complexity increases

Engineering Contradiction:
Improvethermal management efficiencyVSAvoiddevice complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The cooling structure is merged with the quantum device by integrating superconducting tunnel junctions directly onto the substrate near quantum components. This combines the cooling function with the quantum device structure, achieving efficient thermal management while maintaining compact integration. The first and second contact elements are formed in direct contact with semiconductor portions, creating an integrated cooling system that addresses thermal management needs without requiring separate external cooling apparatus.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

Superconducting tunnel junctions serve as intermediary structures that enable efficient heat extraction from quantum components. These junctions act as a bridge between the quantum components and the cooling system, allowing thermal energy to be transferred and dissipated effectively. The tunnel junctions with their specific electrical characteristics provide a controlled interface for thermal management, resolving the contradiction between cooling efficiency and device simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If cooling contact elements are integrated close to quantum components, then thermal insulation is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improvethermal insulationVSAvoidmanufacturing precision
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The cooling structure implements local quality by placing contact elements with specific superconducting properties at precise locations near quantum components where thermal management is most critical. The first contact element contacts a first semiconductor portion and the second contact element contacts a second semiconductor portion, creating localized cooling zones with optimized thermal characteristics. This approach improves thermal insulation where needed without requiring high precision across the entire device structure.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The cooling system is segmented into distinct contact elements (first and second contact elements) that can be independently formed and positioned. Each contact element is formed in contact with specific semiconductor portions through separate manufacturing steps, allowing for modular fabrication. This segmentation reduces the overall manufacturing precision requirement compared to forming a single integrated cooling structure, as each element can be optimized and positioned independently.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances quantum operation stability by local cooling, protecting against heat dissipation from nearby control components, while maintaining device scalability and requiring minimal manufacturing adjustments.

Implementation Method 1

the first contact element being in contact by a first end with a first semiconductor portion of the component so as to form with the first semiconductor portion at least one tunnel junction

Methodology Applied
Scientific EffectTunnel junction:

Implementation Method 2

the first contact element comprising at least one given superconducting metal material

Methodology Applied
Scientific EffectSuperconductivity: Superconductivity

Data Source

PatentUS20250301717A1Integrated cooling structure for semiconductor qubit quantum device
Publication Date: 2025.09.25 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • US20250301717A1 patent drawing
  • US20250301717A1 patent drawing
  • US20250301717A1 patent drawing

AI summary

A structure for cooling a component of a quantum device by circulating a given current between a first contact element with the component and a second contact element with the component, the first contact element comprising at least one given superconducting metal material, in particular at a given temperature less than 2K, and being in contact by a first end with a first semiconductor portion of said component so as to form with the first semiconductor portion at least one cooling tunnel junction.