Capacitive Qubit Coupling With Nested Electromagnetic Shielding

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Solution Overview

Problem

Existing quantum devices face challenges in increasing the number of qubits while effectively interconnecting them and shielding them from external electromagnetic waves.

Innovation Solution

A quantum device is designed with a capacitive coupling substrate that includes a shield layer covering the qubits, an insulating film, and electrodes, which are capacitively coupled to the qubit electrodes, providing effective shielding and reducing dielectric loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a capacitive coupling substrate is used to interconnect multiple qubits, then the computational capacity is expanded, but the qubits become vulnerable to external electromagnetic waves

Engineering Contradiction:
Improvecomputational capacityVSAvoidelectromagnetic interference
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent implements a nested shielding structure where a first shield layer is formed on the capacitive coupling substrate, and a second shield layer is formed on the qubit substrate. These nested shield layers create multiple levels of electromagnetic protection while maintaining the capacitive coupling function for qubit interconnection, thus resolving the contradiction between expanding computational capacity and protecting against electromagnetic interference.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent introduces shield layers as intermediary elements between the qubits and external electromagnetic environment. These shield layers act as mediators that block harmful electromagnetic waves while allowing the capacitive coupling to function, thus protecting the qubits without compromising the interconnection capability.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Object-affected harmful factors

If shield layers are added to protect qubits from electromagnetic waves, then shielding effectiveness is improved, but dielectric loss increases

Engineering Contradiction:
Improveelectromagnetic shieldingVSAvoiddielectric loss
Core Design Contradiction:
Object-affected harmful factorsVSLoss of energy

Solution Approach 1:

The patent applies local quality by forming shield layers only in specific regions where electromagnetic shielding is most critical, rather than uniformly across the entire substrate. The insulating film is strategically positioned between the shield layers and qubits to minimize dielectric loss in areas where shielding is provided, thus optimizing the balance between shielding effectiveness and energy loss.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses composite material structures combining conductive shield layers with insulating films having optimized dielectric properties. This composite approach allows the shield layers to provide electromagnetic protection while the insulating film minimizes dielectric loss, resolving the contradiction between shielding effectiveness and energy conservation.

Inventive Principle:
Principle #40Composite materials

3Productivity

If the number of qubits is increased by adding more qubit substrates, then computational capacity is expanded, but device complexity increases

Engineering Contradiction:
Improvecomputational capacityVSAvoiddevice structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent implements multi-functionality by designing the capacitive coupling substrate to simultaneously serve as both an interconnection medium for coupling qubits from different substrates and as a platform for providing electromagnetic shielding. This universal design allows the same substrate structure to fulfill multiple functions, expanding computational capacity without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the interconnection function and shielding function into a single integrated structure. The capacitive coupling substrate is combined with shield layers to create a multi-functional component that both connects qubits across substrates and protects them from electromagnetic interference, thus reducing overall device complexity while expanding computational capacity.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design allows for stable operation of qubits by suppressing coherence loss and stray capacitances, enhancing shielding against electromagnetic interference.

Implementation Method 1

the capacitive coupling substrate includes a third electrode capacitively coupled to the first electrode and the second electrode, and an insulating film provided between the third electrode and the shield layer

Methodology Applied
Scientific EffectCapacitive coupling: Capacitance

Implementation Method 2

a shield layer covering the first qubit and the second qubit

Methodology Applied
Scientific EffectElectromagnetic shielding: Faraday Cage

Data Source

PatentUS20260006862A1Quantum device and method for manufacturing quantum device
Publication Date: 2026.01.01 FUJITSU LTD
  • US20260006862A1 patent drawing
  • US20260006862A1 patent drawing
  • US20260006862A1 patent drawing

AI summary

A quantum device includes a first qubit substrate, a second qubit substrate, and a capacitive coupling substrate. The first qubit substrate includes a first qubit and a first electrode coupled to the first qubit. The second qubit substrate includes a second qubit and a second electrode coupled to the second qubit. The capacitive coupling substrate includes a third electrode capacitively coupled to the first electrode and the second electrode, a shield layer covering the first qubit and the second qubit, and an insulating film provided between the third electrode and the shield layer.