Quantum Dot Qubit Resonator Layout for Lower Thermal Heating

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Solution Overview

Problem

Existing qubit devices face challenges with local thermal heating and reduced coherence time due to high electrical resistance, which affects the fidelity and range of Rabi frequency in quantum computing applications.

Innovation Solution

Incorporating a superconductive resonator adjacent to the quantum dot qubit region, made of materials like MoGe, NbN, or Nb3Sn, to reduce thermal heating and enhance the Rabi frequency range by maintaining low electrical resistance and coherence time.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional resonator is used in the qubit device, then the device structure is simpler, but local thermal heating increases and coherence time decreases due to high electrical resistance

Engineering Contradiction:
Improvecoherence timeVSAvoidlocal thermal heating
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent changes the electrical resistance parameter of the resonator by using superconductive materials (such as aluminum, niobium, or lead) instead of conventional conductive materials. This parameter change from high resistance to near-zero resistance fundamentally alters the thermal properties, eliminating local thermal heating and extending coherence time of the qubit device.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures where superconductive layers are integrated with semiconductor materials (such as silicon or germanium) to form the resonator. This composite approach combines the low-resistance properties of superconductors with the semiconductor substrate, achieving both low thermal heating and compatibility with existing qubit device architectures.

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If a conventional resonator with high electrical resistance is used, then the device is easier to manufacture, but the Rabi frequency range is reduced and fidelity decreases

Engineering Contradiction:
ImproveRabi frequency rangeVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent changes the electrical resistance parameter to near-zero values using superconductive materials, which directly expands the achievable Rabi frequency range. The low resistance enables broader frequency operation and higher fidelity quantum gates, while the manufacturing complexity is managed through established superconductive fabrication techniques.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The superconductive resonator improves thermal stability, increases coherence time, and allows for a wider range of microwave frequencies, enhancing the performance and fidelity of qubit operations.

Implementation Method 1

Incorporating a superconductive resonator adjacent to the quantum dot qubit region, made of materials like MoGe, NbN, or Nb3Sn, to reduce thermal heating and enhance the Rabi frequency range by maintaining low electrical resistance and coherence time

Methodology Applied
Scientific EffectSuperconductivity: Superconductivity

Data Source

PatentUS20250366378A1Superconductive qubit device
Publication Date: 2025.11.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250366378A1 patent drawing
  • US20250366378A1 patent drawing
  • US20250366378A1 patent drawing

AI summary

A device includes a source region, a drain region, a channel region, a pair of depletion gates, an accumulation gate, and a superconductive resonator. The channel region is between the source region and the drain region. The pair of depletion gates are spaced apart from each other. The pair of depletion gates both overlap the channel region and define a quantum dot qubit region in the channel region and between the pair of depletion gates. The accumulation gate is above and crossing the pair of depletion gates. The superconductive resonator is laterally adjacent the quantum dot qubit region.