Qubit Substrate Spacer Structure to Limit Electromagnetic Coupling
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Solution Overview
Problem
Existing qubit devices face challenges in preventing or reducing the penetration of electromagnetic waves between qubit substrates, which can lead to deterioration of quantum characteristics such as a decrease in coherence time.
Innovation Solution
A qubit device design that includes a first and second qubit substrate with a connection substrate faced by a spacer portion, where the spacer is in contact with the peripheral portion of the qubit substrate and lower than the surface, forming a recess to inhibit electromagnetic wave propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If qubit substrates are disposed close to each other for miniaturization, then device integration density is improved, but electromagnetic wave penetration between substrates increases causing quantum characteristic deterioration
Solution Approach 1:
A connection substrate is introduced as an intermediary component between the first and second qubit substrates. This connection substrate includes a spacer portion that physically separates the qubit substrates while enabling electrical connection through conductive portions, thereby reducing direct electromagnetic wave penetration while maintaining functional integration.
Solution Approach 2:
The patent introduces a vertical dimension by stacking qubit substrates with a connection substrate in between, rather than placing them side-by-side. This three-dimensional arrangement allows for better electromagnetic isolation while maintaining compact form factor, as the spacer portion creates vertical separation distance.
2Reliability
If spacer portion height is increased to improve electromagnetic wave shielding, then quantum characteristic stability is improved, but device height increases
Solution Approach 1:
The patent optimizes the spacer portion height to a specific parameter range (10-100 μm) that provides sufficient electromagnetic wave shielding while limiting excessive height increase. This parameter optimization balances quantum characteristic stability with compact device dimensions.
Solution Approach 2:
The connection substrate is formed as a composite structure with insulating base material and integrated conductive portions. This composite design provides electromagnetic isolation through the insulating material while maintaining electrical connectivity through the conductive portions, achieving shielding without excessive height.
3Adaptability or versatility
If connection substrate is added to connect qubit substrates, then qubit connectivity is improved, but device complexity increases
Solution Approach 1:
The connection substrate merges multiple functions into a single component: it provides mechanical support through the base material, electromagnetic isolation through the insulating property, and electrical connection through the conductive portions. This merging reduces the need for separate components and simplifies the overall device structure.
Solution Approach 2:
The connection substrate serves multiple purposes simultaneously: it acts as a mechanical support structure, an electromagnetic shield, and an electrical interconnection medium. This multi-functionality reduces the number of separate components needed, thereby reducing overall device complexity despite adding connectivity capabilities.
Data Source
Figure 1A~1C
Figure 2
Figure 3A~3C
AI summary
A qubit device (100) includes a first qubit substrate (10a) having a first qubit (30a) formed on a first surface (12a), a second qubit substrate (10b) having a second qubit (30b) formed on a second surface (12b), a connection substrate (40) disposed to face the first surface and the second surface, and a spacer portion (50) provided to be located at least between the connection substrate and the first qubit substrate, wherein the first surface and the second surface are located in a same plane, and the spacer portion is provided to be in contact with a third surface (15a) that is provided in a peripheral portion of the first qubit substrate and is lower than the first surface.