Qubit Substrate Groove Layout for Reliable Interlayer Connection
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Solution Overview
Problem
The challenge in quantum devices is to maintain reliable electrical connections between surfaces while preventing a decrease in mechanical strength of conductive films formed in through holes or grooves, which are crucial for connecting qubits in quantum computers.
Innovation Solution
A method involving the formation of first and second grooves in a qubit substrate, with conductive films on their surfaces, ensuring electrical connection through these grooves while maintaining mechanical integrity by controlling the angles and dimensions of the grooves and films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through hole with vertical side surface is formed and conductive films are formed from both surfaces, then electrical connection is achieved, but the film thickness becomes thin near the center causing poor electrical connection
Solution Approach 1:
The through hole is divided into two separate grooves: a first groove formed from the first surface and a second groove formed from the second surface. These grooves meet or overlap in the middle region, creating segmented conductive film formation zones that avoid the thin-film problem at the center while maintaining electrical connection.
2Manufacturing precision
If the side surface of the through hole is inclined in a tapered shape, then film thickness is maintained, but the contact area between conductive films is reduced
Solution Approach 1:
Instead of using a single tapered through hole, the structure is segmented into two separate grooves with their own side surfaces. This allows each groove to have optimized geometry for film formation while the grooves meet in the middle to provide sufficient contact area between conductive films.
3Reliability
If grooves are formed to improve electrical connection reliability, then connection quality improves, but the mechanical strength of conductive films decreases
Solution Approach 1:
The groove geometry is optimized locally: the side surfaces are configured with specific angles and the grooves have controlled depths and widths. This local optimization allows the conductive films to maintain adequate thickness and mechanical strength in critical regions while still achieving reliable electrical connection at the interface.
Data Source
Figure 1
Figure 2A~2B
Figure 3A~3C
AI summary
Provided is a method of manufacturing a quantum device (100) including a qubit and a qubit substrate (10) having a first surface (11) on which the qubit is formed. The method includes forming a first groove (60) in a second surface (12) of the qubit substrate, forming a first conductive film (22) on a bottom surface (61) and a side surface (62) of the first groove, forming a second groove (50) reaching a part of the bottom surface of the first groove in the first surface after the forming the first conductive film, forming a second conductive film (21) on a bottom surface (51) and a side surface (52) of the second groove; and forming the qubit on the first surface.