Qubit Assembly Interconnect for Thick Waveguide Films
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Solution Overview
Problem
The existing methods for preparing Josephson junctions in qubit assemblies restrict the thickness of the waveguide film, limiting the performance of the qubit assembly due to the need for precise alignment and connection with the external circuit.
Innovation Solution
A qubit assembly preparation method involving the use of a Dolan bridge photoresist structure to create a three-layer superconducting structure with intersecting superconducting portions, where insulation layers are selectively removed to allow a connection layer to link these portions with waveguide films in different regions, enabling communication without thickness limitations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a double-oblique angle evaporation method is used to prepare Josephson junction with Dolan bridge photoresist structure, then the qubit structure can be formed with proper insulation, but the thickness of the waveguide film is restricted which limits the performance of qubit assembly
Solution Approach 1:
The patent introduces a vertical dimension by growing an insulating layer on the waveguide film surface, creating a stepped structure where the qubit structure sits at a higher elevation than the waveguide film. This dimensional change allows the waveguide film to have greater thickness while maintaining proper electrical isolation and connection geometry, resolving the contradiction between alignment precision and thickness adaptability.
Solution Approach 2:
The patent introduces an insulating layer as an intermediary element between the waveguide film and the qubit structure. This intermediate layer provides both electrical isolation and a platform for selective removal to create connection regions, enabling the waveguide film to achieve greater thickness while maintaining proper connection geometry and electrical properties.
2Reliability
If the waveguide film thickness is limited to ensure proper connection with qubit structure, then the connection reliability is improved, but the performance and application range of qubit assembly is restricted
Solution Approach 1:
The patent applies local quality by creating regions with different insulating layer thicknesses or complete removal of the insulating layer at specific connection points. This allows the waveguide film to have greater overall thickness for improved performance while maintaining reliable electrical connection at the localized connection regions where the insulating layer is selectively removed.
Solution Approach 2:
By introducing the vertical dimension through the insulating layer and selective removal process, the patent enables the waveguide film to achieve greater thickness without compromising connection reliability. The connection geometry is established in the vertical dimension rather than being constrained by horizontal alignment alone.
3Manufacturing precision
If a Dolan bridge photoresist structure is used for qubit structure preparation, then the three-layer superconducting structure can be formed, but the insulation layer removal process becomes complex requiring selective removal from multiple target regions
Solution Approach 1:
The patent segments the insulating layer removal process into distinct target regions (first target region and second target region) corresponding to different connection points. This segmentation allows for systematic and controlled removal of the insulating layer at specific locations, making the complex process more manageable and precise rather than attempting uniform removal.
Solution Approach 2:
The insulating layer is grown preliminarily on the entire waveguide film surface before selective removal. This preliminary action establishes a uniform base layer that can then be selectively removed at specific connection regions, simplifying the overall process by providing a consistent starting point for subsequent selective etching or removal operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance of the qubit assembly by allowing full communication with the waveguide film, improving the application range and performance without restricting the thickness of the waveguide film.
Implementation Method 1
an evaporator configured to evaporate a connection layer on the waveguide film, the qubit structure, and the substrate between the waveguide film and the qubit structure
Implementation Method 2
a remover configured to remove the insulation layer on a first target region and a second target region of an upper surface of the superconducting portion
Data Source
AI summary
A qubit assembly preparation method includes preparing a waveguide film in two or more regions on a substrate spaced apart from each other. The method further includes preparing, by using a Dolan bridge photoresist structure, a qubit structure not connected to the waveguide film. The qubit structure includes a three-layer structure. The three-layer structure includes a first superconducting portion and a second superconducting portion intersecting with each other in a coverage region on the substrate. The method further includes removing the insulation layer on a first target region and a second target region of an upper surface of the superconducting portion. The method further includes evaporating a connection layer on the waveguide film, the qubit structure, and the substrate between the waveguide film and the qubit structure.