Photo-Decomposable Quencher Resist Composition for Lithography Resolution
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Solution Overview
Problem
Current lithography techniques face challenges in achieving improved lithography properties, particularly in miniaturization and sensitivity, especially with the use of advanced exposure light sources like KrF and ArF excimer lasers, where existing resist materials struggle to maintain high resolution and pattern fidelity.
Innovation Solution
A resist composition that includes a base component and a photo-decomposable quencher, represented by specific chemical formulas, which generates acid upon exposure, altering solubility in developing solutions to enhance pattern formation and resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist materials are used with advanced exposure light sources (KrF, ArF excimer lasers), then lithography properties such as resolution and pattern fidelity deteriorate, but switching to newer resist materials may improve sensitivity while maintaining resolution
Solution Approach 1:
The patent employs a composite resist material system comprising a specific base resin (polyhydroxystyrene derivative) combined with a photo-decomposable quencher (compound of formula 1) and acid generator. This composite formulation enables the resist to maintain high resolution and pattern fidelity when used with advanced KrF and ArF excimer laser exposure light sources, resolving the deterioration of lithography properties that occurs with conventional resist materials.
2Measurement precision
If the wavelength of exposure light source is shortened to achieve miniaturization, then resolution improves, but sensitivity of existing resist materials decreases
Solution Approach 1:
The patent modifies the chemical parameters of the resist material by incorporating a photo-decomposable quencher with specific structural parameters (R1-R6 groups, Y1 linking group) that enhances the resist's sensitivity to shorter wavelength exposure light (KrF 248nm, ArF 193nm). This parameter optimization allows the resist to maintain high sensitivity while achieving the improved resolution required for pattern miniaturization.
3Manufacturing precision
If photo-decomposable quencher is added to resist composition, then lithography properties improve, but device complexity increases
Solution Approach 1:
The patent introduces a photo-decomposable quencher with specific local molecular structure (formula 1 with defined R1-R6 and Y1 parameters) that performs the localized function of trapping acid at unexposed portions. This targeted local action improves lithography properties by suppressing acid diffusion and enhancing pattern fidelity, while the specific molecular design maintains reasonable compositional simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition improves lithography properties by enabling precise pattern formation and increased sensitivity, suitable for advanced light sources, by controlling acid generation and solubility changes in the resist material.
Implementation Method 1
a chemically amplified resist composition which includes a base material component that exhibits a changed solubility in a developing solution under the action of acid and an acid generator component that generates acid upon exposure
Implementation Method 2
the photo-decomposable quencher loses the basicity thereof with respect to acid generated from an acid generator component and the like at exposed portions, whereas the photo-decomposable quencher traps acid at unexposed portions such that diffusion of acid from exposed portions to unexposed portions can be suppressed
Data Source
AI summary
A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component (A) which exhibits changed solubility in a developing solution under action of acid, and a photo-decomposable quencher (D0) containing a compound represented by general formula (d0) shown below. In the formula, R1 represents a hydrocarbon group of 4 to 20 carbon atoms which may have a substituent; Y1 represents a single bond or a divalent linking group; R2 and R3 each independently represents a substituent of 0 to 20 carbon atoms other than a fluorine atom; one of R2 and R3 may form a ring with Y1; Mm+ represents an organic cation having a valency of m; and m represents an integer of 1 or more.