Quinone Etchant for Fast, Smooth Molybdenum Semiconductor Etching

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Solution Overview

Problem

Existing etchants for molybdenum-containing substances fail to achieve both a high etching rate and effective suppression of surface roughness during the etching process.

Innovation Solution

An etchant comprising a quinone compound with a quinone structure and a solvent, specifically formulated with a quinone compound content of 0.0001% to 10.0% by mass, and a solvent that includes water and a water-soluble organic solvent, is used to etch molybdenum-containing substances.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional etchants are used to increase etching rate, then productivity is improved, but surface roughness increases and manufacturing precision deteriorates

Engineering Contradiction:
Improveetching rateVSAvoidsurface roughness
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies parameter changes by carefully controlling the concentration of hydrogen peroxide (0.01-5% by mass) and the dissolved oxygen amount (3-50 mg/L) in the etchant. By adjusting these chemical parameters within specific ranges, the etchant achieves optimal balance between etching rate and surface roughness control, resolving the contradiction between productivity and manufacturing precision

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The etchant employs a composite chemical formulation containing hydrogen peroxide, acidic substance, amine compound, hydrogen peroxide decomposition inhibitor, and molybdenum erosion promoting ions. This composite composition works synergistically to achieve both high etching rate and smooth surface finish, simultaneously improving productivity while maintaining manufacturing precision

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The etchant provides an excellent etching rate while effectively suppressing surface roughness of molybdenum-containing substances, ensuring high precision in semiconductor manufacturing.

Implementation Method 1

an etchant used for a molybdenum-containing substance, comprising: a quinone compound having a quinone structure; and a solvent

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS20260071332A1Etchant and method for manufacturing semiconductor device
Publication Date: 2026.03.12 FUJIFILM CORP
  • US20260071332A1 patent drawing
  • US20260071332A1 patent drawing
  • US20260071332A1 patent drawing

AI summary

An object is to provide an etchant which has an excellent etching rate and can suppress roughness of a surface of a molybdenum-containing substance after an etching treatment. The etchant of the present invention is an etchant used for a molybdenum-containing substance, the etchant containing a quinone compound having a quinone structure and a solvent.