Racetrack Memory with Separated Domain Writing and Transport
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Solution Overview
Problem
Racetrack memory devices face challenges in achieving high density and low power consumption while effectively recording and controlling the size of magnetic domains without the use of external magnetic fields.
Innovation Solution
The racetrack memory device spatially separates the writing element for creating magnetic domains from the moving element for storing them, utilizing a unique configuration of spin-orbit torque layers and oxide layers to control magnetic domain creation and movement without external magnetic fields, with specific current ratios and pulse widths to manage domain size and direction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the writing element and moving element are integrated in a conventional racetrack memory device, then the device structure is simpler, but the control of magnetic domain size and position becomes less precise and power consumption increases
Solution Approach 1:
The racetrack memory device is divided into distinct functional elements: a writing element for creating magnetic domains and a moving element for transporting them. This segmentation allows independent optimization of each element's dimensions and magnetic properties, enabling precise control of magnetic domain size and position while maintaining a manageable overall device structure.
2Ease of operation
If external magnetic fields are used to create and move magnetic domains, then the control mechanism is simpler, but the device requires additional components and power consumption increases
Solution Approach 1:
The device replaces external magnetic field application with spin-orbit torque generated by current flow through the writing element. This substitution eliminates the need for external magnetic field components while maintaining effective magnetic domain creation and movement control through electrical means.
3Quantity of substance
If the width of the moving element is increased to store more magnetic domains, then the storage capacity increases, but the density and power efficiency decrease
Solution Approach 1:
The device optimizes the width of the moving element to a specific range (50-200 nm) that balances storage capacity with power efficiency. By carefully controlling this dimensional parameter, the device achieves adequate storage capacity while minimizing the current required for magnetic domain movement, thus reducing power consumption.
4Quantity of substance
If the magnetic domain size is reduced to increase storage density, then the capacity increases, but the energy required to create and move domains increases
Solution Approach 1:
The writing element is designed with specific local properties including perpendicular magnetic anisotropy and controlled saturation magnetization. These localized magnetic properties enable the creation of small magnetic domains with reduced energy requirements, as the perpendicular anisotropy provides stable magnetization switching at lower energy costs compared to in-plane anisotropy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient, high-speed operation with flexible capacity adjustment, improving power efficiency and enabling multi-bit storage without the need for complex external magnetic field applications.
Implementation Method 1
a writing element extending in a first horizontal direction and configured to create a magnetic domain based on a first current applied to the writing element
Implementation Method 2
the moving element configured to have the magnetic domain created in the writing element injected into the moving element based on a second current applied to the moving element
Data Source
AI summary
A racetrack memory device may include a writing element extending in a first horizontal direction and configured to create a magnetic domain based on a first current applied to the writing element, a moving element having a first end connected to the writing element and extending in a second horizontal direction intersecting the first horizontal direction, the moving element configured to have the magnetic domain created in the writing element being injected into the moving element based on a second current applied to the moving element, and a reading element on the moving element and configured to read a magnetic domain included in the moving element. A width of the moving element may be less than a width of the writing element.


