Radial Inductive Heating for Wafer Temperature Uniformity
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Solution Overview
Problem
Local temperature differences during the production of semiconductor chips in a wafer composite lead to inhomogeneous performance, such as wavelength shifts and brightness variations in light-emitting diode chips due to inhomogeneous temperature distribution.
Innovation Solution
A heating device with a heating plane and a first heating unit extending radially from a reference point, comprising inductive heating elements that generate a time-varying magnetic field, allowing precise and localized temperature control of the wafer composite, either through rotation or stationary arrangement, to ensure uniform heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional heating devices with radially symmetric or circular heating elements are used, then the heating coverage is uniform, but the temperature control precision and response speed are insufficient
Solution Approach 1:
The heating device is divided into multiple independent heating units arranged in the radial direction, each capable of independent temperature control. This segmentation allows precise local temperature adjustment while maintaining overall heating uniformity, resolving the contradiction between temperature control precision and device complexity.
Solution Approach 2:
Different heating units in the radial arrangement can provide different heating intensities to different radial zones of the wafer composite. This local quality approach enables precise temperature control at specific locations without requiring complex overall system redesign, improving temperature control precision while managing device complexity.
2Manufacturing precision
If the heating device rotates with respect to the wafer composite, then the temperature can be precisely influenced over the entire area, but the system complexity increases
Solution Approach 1:
The heating device incorporates a rotation mechanism that allows dynamic adjustment of the heating elements' position relative to the wafer composite. This dynamic capability enables the heating units to sequentially cover different radial zones, achieving uniform temperature distribution across the entire wafer area while using a relatively simple radial heating unit design.
3Productivity
If inductive heating elements are used, then the heating efficiency is improved, but the local temperature control capability may be reduced
Solution Approach 1:
The inductive heating elements are segmented into multiple independent units arranged radially, with each unit capable of independent power control. This segmentation maintains the high heating efficiency of inductive heating while enabling precise local temperature control by adjusting the power supplied to individual heating units based on local temperature requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise and efficient temperature control of the wafer composite, minimizing local temperature inhomogeneities and resulting in homogeneous performance of semiconductor chips, preventing wavelength shifts and brightness variations during operation.
Implementation Method 1
inductive heating elements that generate a time-varying magnetic field
Data Source
AI summary
A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a method for producing semiconductor chips in a wafer composite includes providing a carrier having a wafer plane and a reference point, wherein the carrier is configured to accommodate at least one wafer composite in the wafer plane, providing a heating device comprising a heating plane and a first heating unit arranged laterally offset from the reference point in the heating plane, and arranging the heating device with its heating plane parallel to the wafer plane, arranging at least one wafer composite in the wafer plane of the carrier, rotating the carrier and the heating device relative to each other about an axis perpendicular to the heating plane and the wafer plane through the reference point, controlling the first heating unit such that a temperature of the carrier is influenced, providing a bending sensor for determining a bending characteristic value, the bending characteristic value being representative of a bending of the at least one wafer composite relative to the wafer plane and controlling the first heating unit based on the bending characteristic value.