Radial Plasma Control for Substrate Processing Uniformity
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Solution Overview
Problem
Existing substrate processing apparatuses using plasma face challenges in uniformly controlling the amount of radicals supplied in the radial direction, leading to variations in processing between the center and periphery of the substrate, which affects film formation and yield.
Innovation Solution
The apparatus includes a process chamber with a substrate support, reaction gas supply holes, plasma generators, and a controller to individually control plasma generators and gas suppliers, allowing for precise adjustment of radical supply through the rotation of the substrate and decentering of plasma generators, ensuring uniform plasma distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If plasma is supplied uniformly across the process chamber, then the processing can be simplified, but the amount of radicals supplied in the radial direction cannot be controlled
Solution Approach 1:
The plasma supply system is segmented into multiple independent plasma generators arranged radially around the substrate. Each plasma generator can be controlled independently to supply plasma to different radial zones, enabling precise control of radical supply in the radial direction while maintaining a structured yet manageable processing system
Solution Approach 2:
Different plasma generators are positioned at different radial locations to provide locally optimized plasma supply. This allows the radical supply to be tailored for specific regions of the substrate, achieving precise radial control while maintaining overall processing effectiveness
2Power
If the substrate is processed with high energy plasma, then the reaction between film and precursor is enhanced, but the radial distribution of radicals becomes uneven
Solution Approach 1:
The high energy plasma supply is segmented across multiple plasma generators positioned radially. Each generator delivers controlled energy to its designated zone, maintaining high overall power while ensuring uniform radial distribution of radicals through coordinated operation of individual segments
Solution Approach 2:
The plasma generators are configured to dynamically adjust their operation to maintain uniform radical distribution. By coordinating the timing and intensity of plasma generation across multiple sources, the system achieves stable radial distribution even at high energy levels
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables uniform radical supply across the substrate, improving film formation consistency and increasing yield by addressing the radial variation issues in plasma distribution.
Implementation Method 1
a plasma generator installed on an upstream side of the reaction gas supply pipe
Implementation Method 2
an amount of radicals supplied in a radial direction of a substrate
Data Source
AI summary
A substrate processing apparatus includes: a process chamber in which a substrate is processed; a substrate support configured to support the substrate in the process chamber; a plurality of reaction gas supply holes formed in a wall of the process chamber opposite to a substrate mounting surface of the substrate support; a reaction gas supply pipe that is fixed to the process chamber and communicates to each of the reaction gas supply holes; a plurality of reaction gas suppliers, each including a plasma generator installed on an upstream side of the reaction gas supply pipe; a plasma controller that is connected to the plasma generator and is configured to individually control a plurality of plasma generators; and a controller configured to control the substrate support, the plurality of reaction gas suppliers, and the plasma controller.