Semiconductor Radiation Detector Signal Compensation for Damage Drift

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Solution Overview

Problem

Semiconductor-based radiation detectors suffer from damage due to high energy radiation, such as fast neutrons, leading to decreased sensitivity and accuracy over time, with traditional compensation methods like temperature cycling being resource-intensive and inefficient.

Innovation Solution

A method and system that compensates for radiation damage by detecting a radiation signal, temperature, and leakage current in a semiconductor-based detector, determining a compensated leakage current and radiation exposure, and outputting a corrected signal, without requiring temperature cycling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If temperature cycling is used to compensate for radiation damage, then detector sensitivity is improved, but time consumption and resource usage increase

Engineering Contradiction:
Improvedetector sensitivityVSAvoidtime consumption
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The detector performs self-diagnosis and self-compensation by automatically detecting its own leakage current, temperature, and radiation exposure levels, then processing this data to compensate for radiation damage without external intervention or temperature cycling

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent replaces the physical temperature cycling process with an electronic/software-based compensation method that uses leakage current measurement and signal processing to achieve the same sensitivity restoration without mechanical/thermal intervention

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If temperature cycling is used to compensate for radiation damage, then detector accuracy is improved, but operational complexity increases

Engineering Contradiction:
Improvedetector accuracyVSAvoidoperational complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The detector autonomously monitors its own degradation through leakage current measurement and performs compensation calculations without requiring external equipment or complex operational procedures

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent changes the compensation approach from physical temperature parameter manipulation to electronic parameter adjustment by measuring leakage current and applying correction factors to the radiation signal based on detected temperature and exposure levels

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables in-situ compensation for radiation damage, maintaining detector sensitivity and accuracy by adjusting for temperature and radiation exposure, suitable for high-energy radiation environments.

Implementation Method 1

semiconductor-based radiation detection devices based on photodiode arrays

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

detecting, using a temperature sensor, a temperature of the detector

Methodology Applied
Scientific EffectThermal energy detection:

Implementation Method 3

These fast neutrons can damage the semiconductor crystal by causing displacements of atoms in the semiconductor's crystalline structure

Methodology Applied
Scientific EffectNeutron displacement:

Data Source

PatentUS20250355124A1Compensating for radiation damage in semiconductor-based radiation detectors
Publication Date: 2025.11.20 KROMEK
  • US20250355124A1 patent drawing
  • US20250355124A1 patent drawing
  • US20250355124A1 patent drawing

AI summary

A method of compensating for high energy radiation damage to a semiconductor, in a semiconductor-based radiation detector, the method including: (a) detecting, using the detector, a radiation signal, wherein the detector comprises the semiconductor; (b) detecting, using a temperature sensor, a temperature of the detector; (c) detecting a leakage current in the detector; (d) determining a compensated leakage current based on the detected temperature; (e) determining a high energy radiation exposure based on the compensated leakage current; (f) determining, using the detected radiation signal, a compensated radiation signal based on the determined high energy radiation exposure; and (g) outputting the compensated radiation signal.