Radiation Detector Dual Gate Transistor Threshold Voltage Stability

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Solution Overview

Problem

Existing radiation detectors face challenges in suppressing variation and fluctuation in threshold voltage, which affects the accuracy of radiation detection, particularly in amplifying transistors used in active pixel sensors.

Innovation Solution

A radiation detector design featuring an amplifying transistor with a channel layer and two gate electrodes, where the second gate electrode is set to the same potential as the first gate electrode, functioning as a back gate to stabilize the threshold voltage, and utilizing an oxide semiconductor with a non-amorphous crystal structure, such as indium and zinc, to reduce fluctuations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If an amplifying transistor is used to detect small amounts of light from radiation, then the detection sensitivity is improved, but the threshold voltage variation increases leading to unstable operation

Engineering Contradiction:
Improvedetection sensitivityVSAvoidthreshold voltage stability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The gate electrode is divided into two separate gate electrodes (first gate electrode and second gate electrode) that can be independently controlled. This segmentation allows the first gate to control channel formation while the second gate stabilizes the threshold voltage, resolving the contradiction between sensitivity and stability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention changes the electrical parameter configuration by applying different potentials to the two gate electrodes. By independently adjusting gate potentials, the system can optimize both detection sensitivity (through channel control) and threshold voltage stability (through potential stabilization), eliminating the trade-off.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If the light receiving devices are fabricated densely to achieve high-resolution images, then the image resolution is improved, but the light receiving area of each device is reduced

Engineering Contradiction:
Improveimage resolutionVSAvoidlight receiving area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

By using IGZO semiconductor material which has higher carrier mobility and lower leak current, the invention enables smaller transistor dimensions while maintaining performance. This parameter change in material properties allows dense fabrication for high resolution without excessive loss of light receiving area.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration stabilizes the threshold voltage of the amplifying transistor, thereby suppressing variation in the amount of radiation detected and ensuring stable operation, enabling high-resolution image capture with a small amount of radiation.

Implementation Method 1

The photodiode 201 converts emitted light into charge

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

a scintillator that emits light in response to radiation

Methodology Applied
Scientific EffectScintillation: Scintillation

Data Source

PatentUS11158658B2Radiation detector
Publication Date: 2021.10.26 SHARP KK
  • US11158658B2 patent drawing
  • US11158658B2 patent drawing
  • US11158658B2 patent drawing

AI summary

[Object] To achieve a radiation detector capable of suppressing variation in the amount of radiation detected.[Solution] A first gate electrode (52) is connected to a light receiving device, and a second gate electrode (53) is configured to have the same potential as that of the first gate electrode (52).