Radiation Detector Semiconductor Insulator Stack for Stable Operation
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Solution Overview
Problem
Existing semiconductor devices using oxide semiconductors as channels face reliability issues due to oxygen vacancies and hole trapping in insulating layers, leading to characteristic variations and instability under radiation exposure.
Innovation Solution
The semiconductor device incorporates a layered structure with specific insulating layers, including silicon oxide and silicon nitride, to suppress oxygen vacancies and hydrogen diffusion, ensuring stable operation under radiation conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a simple insulating layer structure is used, then manufacturing complexity is reduced, but reliability deteriorates due to oxygen vacancies and hole trapping
Solution Approach 1:
The insulating layer is divided into multiple distinct layers (first insulating layer, second insulating layer, third insulating layer) with different materials and functions. Each layer addresses specific issues: the first layer covers oxygen vacancies, the second layer suppresses hydrogen diffusion, and the third layer provides additional stability, collectively resolving the reliability problem without requiring excessive complexity
Solution Approach 2:
The patent employs a composite insulating layer structure combining different materials (e.g., silicon oxide, aluminum oxide, silicon nitride) in specific sequences. This composite approach leverages the complementary properties of each material to simultaneously address oxygen vacancy suppression, hydrogen diffusion prevention, and overall device reliability enhancement
2Reliability
If oxygen is supplied to the oxide semiconductor layer, then oxygen vacancies are reduced improving reliability, but device complexity increases due to additional manufacturing steps
Solution Approach 1:
The insulating layers are formed with oxygen-rich compositions before the oxide semiconductor layer is completely finalized. The first insulating layer is specifically designed to supply oxygen to the oxide semiconductor layer during subsequent heating processes, proactively preventing oxygen vacancies before they cause reliability issues, rather than requiring complex post-processing oxygen supply steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure enhances the reliability and stability of the semiconductor device by reducing hole trapping and maintaining consistent electrical characteristics under radiation exposure.
Implementation Method 1
a first insulating layer arranged between the semiconductor layer and the first gate electrode and containing a silicon oxide covering a pattern end of the semiconductor layer
Implementation Method 2
The semiconductor device incorporates a layered structure with specific insulating layers, including silicon oxide and silicon nitride, to suppress oxygen vacancies and hydrogen diffusion
Implementation Method 3
a second insulating layer arranged above the first insulating layer between the semiconductor layer and the first gate electrode, the second insulating layer having a common planar shape with the first gate electrode and containing a first metal oxide
Implementation Method 4
a third insulating layer arranged above the second insulating layer between the semiconductor layer and the first gate electrode, the third insulating layer having a common planar shape with the first gate electrode and containing a silicon nitride
Data Source
AI summary
A semiconductor device according to an embodiment of the present invention includes: a semiconductor layer arranged above an insulating surface; a first gate electrode arranged above the semiconductor layer and facing the semiconductor layer; a first insulating layer arranged between the semiconductor layer and the first gate electrode and containing a silicon oxide covering a pattern end of the semiconductor layer; a second insulating layer arranged above the first insulating layer between the semiconductor layer and the first gate electrode, the second insulating layer having a common planar shape with the first gate electrode and containing a first metal oxide; and a third insulating layer arranged above the second insulating layer between the semiconductor layer and the first gate electrode, the third insulating layer having a common planar shape with the first gate electrode and containing a silicon nitride.