Radiation Detector Metal Complex Organic Semiconductor Layer

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Solution Overview

Problem

Current radiation detectors using organic semiconductor materials face challenges in achieving high sensitivity, particularly in efficiently absorbing and extracting charge from radiation, especially when the detector layer is thick.

Innovation Solution

Incorporating a metal complex with a heavy metallic element like Ir, Pt, or Cu between conductive layers and an organic semiconductor material, allowing for efficient radiation absorption and charge extraction regardless of layer thickness, enhancing sensitivity through a uniform mixing of p-type and n-type regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the detector layer is made thicker to improve radiation absorption, then the absorption capacity increases, but the charge extraction efficiency deteriorates

Engineering Contradiction:
Improveradiation absorption capacityVSAvoidcharge extraction efficiency
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent introduces a dual-region structure within the detector layer: a first region containing metal complex material for efficient charge extraction, and a second region containing organic semiconductor material for radiation detection. This local differentiation allows each region to optimize its function - the metal complex region facilitates charge movement regardless of overall layer thickness, while the organic semiconductor region provides radiation sensitivity.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent combines two different materials (metal complex and organic semiconductor) with complementary properties into a single detector layer. The metal complex material provides excellent charge extraction properties, while the organic semiconductor material provides radiation detection capability. This composite approach allows the detector to achieve both thick-layer radiation absorption and efficient charge extraction simultaneously.

Inventive Principle:
Principle #40Composite materials

2Measurement precision

If the detector layer is made thicker to improve sensitivity, then the detection capability increases, but the charge movement difficulty increases

Engineering Contradiction:
Improvedetection sensitivityVSAvoidcharge movement ease
Core Design Contradiction:
Measurement precisionVSEase of operation

Solution Approach 1:

By creating a first region with metal complex material specifically optimized for charge extraction, the patent ensures that charge movement occurs efficiently in this dedicated zone. This local optimization of charge transport properties allows thick detector layers to maintain good charge extraction performance.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The metal complex material acts as an intermediary between the radiation interaction zone (organic semiconductor region) and the charge collection electrodes. It facilitates the transfer and extraction of charges generated in the thick organic semiconductor layer, enabling efficient charge collection even when the detector layer is thick.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If metal complex concentration is increased to improve charge extraction, then the extraction efficiency increases, but the material cost increases

Engineering Contradiction:
Improvecharge extraction efficiencyVSAvoidmetal complex concentration
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

Instead of uniformly distributing metal complex material throughout the entire detector layer, the patent confines it to a specific first region. This localized approach achieves effective charge extraction while minimizing the total amount of expensive metal complex material required.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent optimizes the concentration of metal complex material within the first region to achieve optimal charge extraction performance. By carefully controlling this parameter, the patent balances extraction efficiency with material cost, finding the optimal concentration point that provides sufficient performance without excessive material usage.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration significantly improves detection sensitivity and conversion efficiency, allowing for effective radiation detection even with thicker layers by facilitating easy charge movement and absorption, with optimal results achieved at a metal complex concentration of 6.4 wt% or more.

Implementation Method 1

a radiation detector that uses an organic semiconductor material... Incorporating a metal complex with a heavy metallic element like Ir, Pt, or Cu between conductive layers and an organic semiconductor material, allowing for efficient radiation absorption and charge extraction

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Implementation Method 2

Incorporating a metal complex with a heavy metallic element like Ir, Pt, or Cu... allowing for efficient radiation absorption

Methodology Applied
Scientific EffectPhotoelectric absorption: Absorption (EM radiation)

Data Source

PatentUS11081657B2Radiation detector
Publication Date: 2021.08.03 KK TOSHIBA
  • US11081657B2 patent drawing
  • US11081657B2 patent drawing
  • US11081657B2 patent drawing

AI summary

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.