Radiation Detector Pixel Segmentation to Limit Charge Sharing
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Solution Overview
Problem
Existing radiation detectors face challenges in achieving high spatial resolution while maintaining efficient radiation absorption, particularly in semiconductor detectors where charge carriers are not effectively confined to individual pixels or diodes, leading to shared charge distribution.
Innovation Solution
A method involving a semiconductor radiation detector with discrete electrodes and electrical contacts, where charge carriers generated by radiation absorption are directed predominantly to specific pixels or diodes, minimizing shared charge flow and enhancing pixel-specific detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a semiconductor radiation detector is used to achieve high spatial resolution, then spatial resolution is improved, but charge carriers are not effectively confined to individual pixels leading to shared charge distribution
Solution Approach 1:
The detector is divided into discrete pixels with individual charge collection electrodes. By segmenting the charge collection structure into pixel-specific electrodes, the patent ensures that charge carriers generated in each pixel are collected by dedicated electrodes rather than being shared between adjacent pixels, thereby improving charge carrier confinement while maintaining high spatial resolution
Solution Approach 2:
The patent implements pixel-specific charge collection electrodes where each electrode is optimized for collecting charge carriers from its corresponding pixel region. This local optimization ensures that each pixel has dedicated charge collection capability, preventing charge sharing between pixels and improving both spatial resolution and charge carrier confinement reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves spatial resolution and efficiency by ensuring that charge carriers generated by radiation are predominantly collected by individual pixels or diodes, thereby enhancing the accuracy and clarity of radiation imaging.
Implementation Method 1
A semiconductor radiation detector may include a semiconductor layer that absorbs radiation in wavelengths of interest. When a radiation particle is absorbed in the semiconductor layer, multiple charge carriers (e.g., electrons and holes) are generated
Implementation Method 2
When a radiation particle is absorbed in the semiconductor layer, multiple charge carriers (e.g., electrons and holes) are generated and swept under an electric field towards electrical contacts on the semiconductor layer
Data Source
Figure 1A
Figure 1B
Figure 1C
AI summary
A method comprises attaching a plurality of chips (151) to a substrate (122), wherein each of the chips (151) comprises only one pixel (150) configured to detect radiation. A method comprises attaching a wafer to a substrate (122), wherein the substrate (122) comprises discrete electrodes (125), wherein the wafer comprises a radiation absorption layer (110) and a plurality of electrical contacts (119A, 119B), wherein each of the electrical contacts (119A, 119B) is connected to at least one of the discrete electrodes (125); identifying a defective area of the wafer; replacing a portion of the wafer with a chip configured to absorb radiation, the portion comprising the defective area.