Radiation Detection Element Layout for Wider Sensitive Area
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Solution Overview
Problem
Conventional radiation detection elements face challenges with reduced sensitive area due to increased size from collimators or electrodes, leading to inefficient charge collection and obscured radiation energy measurement.
Innovation Solution
A radiation detection element with a heavily-doped layer narrower than the second electrode, spaced sets of first and heavily-doped layers, and third electrodes generating an electric potential gradient towards the first electrode, expanding the sensitive area without increasing size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a collimator is disposed to cover the region where the electric potential gradient is gentle, then charge collection efficiency is improved, but the size of the radiation detection element increases
Solution Approach 1:
The patent applies local quality by creating a heavily-doped layer only at specific regions (under the first electrode and at intermediate regions between first electrodes) rather than uniformly across the entire semiconductor. This localized doping modifies the electric potential gradient only where needed to improve charge collection efficiency, eliminating the need for a collimator and maintaining a compact structure.
Solution Approach 2:
The patent changes the doping concentration parameter by introducing a heavily-doped layer with higher dopant concentration than the surrounding semiconductor. This parameter change creates localized regions with modified electric field characteristics that guide charges to first electrodes without requiring additional structural components like collimators.
2Area of stationary object
If multiple first electrodes are arranged on one surface of a flat-plate semiconductor, then the detection area is increased, but charge collection efficiency in intermediate regions deteriorates
Solution Approach 1:
The patent introduces a heavily-doped layer specifically at intermediate regions between multiple first electrodes. This localized modification creates an enhanced electric potential gradient in these intermediate areas, ensuring efficient charge collection to the nearest first electrode while maintaining the multi-electrode configuration for expanded detection area.
Solution Approach 2:
The heavily-doped layer acts as an intermediary structure that mediates between the multiple first electrodes and the incident radiation. It modifies the electric field distribution in intermediate regions to ensure charges are efficiently guided to the appropriate first electrode, preventing charge dispersion while maintaining the benefits of multiple electrodes.
3Reliability
If an electrode is disposed around the second electrode to increase the electric potential gradient, then charge collection efficiency is improved, but the structure becomes more complex and size increases
Solution Approach 1:
The patent merges the function of increasing the electric potential gradient with the existing first electrode structure by forming a heavily-doped layer underneath it. This integration eliminates the need for separate additional electrodes around the second electrode, simplifying the overall structure while maintaining improved charge collection efficiency.
Solution Approach 2:
Instead of adding a complete electrode structure around the second electrode, the patent applies local quality by creating a heavily-doped layer only in specific regions where the electric potential gradient needs enhancement. This localized approach achieves the desired electric field modification without the structural complexity of a full surrounding electrode.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances charge collection efficiency and expands the sensitive area for radiation detection, improving detection efficiency while maintaining a simplified structure.
Implementation Method 1
By application of voltage, an electric field is generated inside the semiconductor part. If radiation is incident into the semiconductor part, electric charges are generated inside the semiconductor part and move in accordance with the electric field.
Implementation Method 2
Inside the semiconductor part, a region where an electric potential gradient is gentle is present at the position farthest from the first electrode. The electric potential gradient increases to move the electric charges fast.
Implementation Method 3
If radiation is incident into the semiconductor part, electric charges are generated inside the semiconductor part and move in accordance with the electric field.
Data Source
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AI summary
A radiation detection element that has an expanded sensitive area, a radiation detector and a radiation detection device are provided. The radiation detection element comprising a semiconductor part having a plate shape, a first electrode that is disposed on a first surface being one surface of the semiconductor part and that collects charges generated by incidence of radiation in the semiconductor part, a second electrode that is disposed on a second surface being the other surface of the semiconductor part and that is applied with voltage needed for collecting the charges, and a heavily-doped layer that is disposed at a region of the second surface excluding an edge of the semiconductor part and is doped heavier than the semiconductor part with dopants for making a type of a semiconductor equal to that of the semiconductor part. The heavily-doped layer is on the second surface located at a position overlapped with the second electrode and is thicker than the second electrode.