Radiation-Enhanced Etching of High Dielectric Films
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Solution Overview
Problem
The miniaturization of transistor elements leads to thinner gate insulating films, increasing leakage current and reducing the reliability of transistor operation, as existing etching methods either have low etching rates for high dielectric materials or poor selectivity between the high dielectric film and underlying layers.
Innovation Solution
An etching method involving the application of radiation to an etching aqueous solution to generate active species that functionalize the surface of the high dielectric film, improving etching rates and selectivity by forming hydroxyl groups, which facilitates easier dissolution of the film while maintaining uniformity and reducing the formation time of gate oxide films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional wet etching is used for high dielectric films, then the process is simple, but the etching rate is low and formation time is excessive
Solution Approach 1:
The patent applies radiation (UV, X-ray, or electron beam) to the etching aqueous solution to change its chemical state, generating highly reactive species that dramatically increase the etching rate of high dielectric films without increasing process complexity
Solution Approach 2:
The patent replaces conventional chemical etching mechanisms with radiation-enhanced chemical reactions, where radiation energy activates the etching solution to produce more effective etching action against high dielectric materials
2Manufacturing precision
If conventional etching methods are used, then the process is straightforward, but selectivity between high dielectric film and underlying layers is poor
Solution Approach 1:
The patent changes the chemical parameters of the etching solution through radiation irradiation, creating a solution that selectively attacks high dielectric films while sparing underlying layers, achieving high etching selectivity without complicating the overall process
3Productivity
If gate insulating film is made thinner to accommodate miniaturization, then device density increases, but leakage current increases and reliability decreases
Solution Approach 1:
The patent forms an ultra-thin gate insulating film that replicates the electrical functionality of thicker films while maintaining physical thinness, achieving high device density without compromising reliability through precise radiation-controlled etching
Solution Approach 2:
The patent uses radiation to precisely control the etching process parameters, enabling formation of ultra-thin films with controlled thickness and quality that maintain electrical characteristics while reducing physical thickness for higher density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the etching rate and selectivity of high dielectric films, reducing leakage currents and improving the reliability of transistor elements by efficiently forming gate insulating films with increased thickness and improved electrical characteristics.
Implementation Method 1
applying a radiation to an etching aqueous solution
Implementation Method 2
generate active species that functionalize the surface of the high dielectric film with hydroxyl groups
Data Source
AI summary
An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.