Radiation-Release Die Bonding for Precise Heterogeneous Integration
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in achieving accurate and fast placement of semiconductor dies with respect to one another, particularly in heterogeneous integration, where complex structures and shrinking component sizes require precise alignment and bonding techniques beyond traditional lithography methods.
Innovation Solution
A method involving radiation application to cause transfer of semiconductor dies towards an acceptor location for intermolecular bonding, followed by heating to enhance electrical contact, and a system utilizing a structure, radiation output, and displacement mechanism for controlled die placement and bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional lithography methods are used for die placement, then manufacturing processes are simple, but placement accuracy and speed are insufficient for complex heterogeneous integration
Solution Approach 1:
The patent replaces traditional mechanical lithography-based alignment methods with a radiation-based transfer mechanism. Radiation (e.g., UV light) is used to induce chemical changes in a resist layer, enabling precise die placement through photochemical reactions rather than mechanical contact, thereby achieving higher placement accuracy for complex heterogeneous integration without relying on conventional lithography limitations
Solution Approach 2:
The patent utilizes changes in the physical and chemical parameters of materials during the bonding process. By controlling radiation exposure parameters, temperature, and pressure, the system achieves precise die transfer and bonding. The resist material undergoes parameter changes (solubility, viscosity) in response to radiation, enabling controlled die release and placement with high precision
2Manufacturing precision
If radiation is applied to cause die transfer, then die placement accuracy improves, but the process requires new bonding mechanisms beyond traditional methods
Solution Approach 1:
The patent introduces a resist layer as an intermediary material between the die and the substrate. This resist layer mediates the transfer process by undergoing radiation-induced changes that facilitate controlled die release and placement. The intermediary resist simplifies the overall process by providing a unified mechanism for both alignment and bonding, reducing the need for multiple separate bonding steps
Solution Approach 2:
The patent exploits phase transitions in the resist material induced by radiation exposure. The resist undergoes transitions from a soluble to insoluble state (or vice versa), enabling controlled die release at specific locations. These phase transitions provide a reliable and repeatable mechanism for precise die transfer, improving placement accuracy while maintaining manufacturing feasibility
3Strength
If die bonding is performed with full contact, then bonding strength is maximized, but control over bonding area and timing is reduced
Solution Approach 1:
The patent segments the bonding process into controlled stages through the use of patterned resist layers. Instead of uniform full-contact bonding, the resist is divided into specific regions that control where and when bonding occurs. This segmentation allows precise control over the bonding area and timing while maintaining strong bonds in the intended locations, improving both bonding strength and operational control
Solution Approach 2:
The patent performs preliminary patterning of the resist layer before die transfer. Alignment marks and bonding patterns are pre-defined in the resist, guiding the subsequent die placement process. This preliminary action ensures that when dies are transferred, they bond precisely at the intended locations with optimal contact area, maximizing bonding strength while maintaining precise control over the bonding process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and efficient bonding of semiconductor dies with improved electrical connectivity, addressing the need for accurate and fast integration in complex IC manufacturing processes.
Implementation Method 1
applying radiation to, or near, the die to cause transfer of the die toward the acceptor location
Implementation Method 2
heating the die in contact with the acceptor location to cause or improve electrical contact between the die and the acceptor location
Data Source
Figure 1A~1C
Figure 1D
Figure 2A~2B
AI summary
A system and method for providing a semiconductor die proximate to an acceptor location; and applying radiation to, or near, the die to cause transfer of the die toward the acceptor location, wherein the transferred die is bonded to the acceptor location by intermolecular bonding. The radiation causes the die to bend prior to contact of the die with the acceptor location.