Radiation-Sensitive Composition for Lithographic Stability
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Solution Overview
Problem
In photolithographic techniques, there is a demand for resist compositions that maintain high sensitivity and lithographic performance, including line width roughness (LWR) and critical dimension uniformity (CDU), while also ensuring suitable storage stability and pattern rectangularity, which is challenging due to the degradation of radiation-sensitive acid-generators over time.
Innovation Solution
A radiation-sensitive composition comprising a polymer with an acid-releasable group and a compound represented by a specific formula, which enhances sensitivity and stability, and includes a pattern formation method involving the application, exposure, and development of the resist film to achieve high precision and quality of resist patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional radiation-sensitive acid-generators are used to achieve high sensitivity, then lithographic performance is improved, but storage stability deteriorates due to degradation over time
Solution Approach 1:
The patent changes the chemical parameters of the acid-generator by using a novel compound structure (formula 1) with specific structural features (L1, L2, R1-R5 groups) that provide both high radiation sensitivity and improved storage stability. The molecular structure parameters are optimized to balance reactivity under radiation with stability during storage.
Solution Approach 2:
The patent creates a composite radiation-sensitive composition combining the novel compound (formula 1) with a polymer containing acid-releasable groups. This composite system integrates the acid-generating function with the polymer matrix, achieving both high lithographic performance and enhanced storage stability through the synergistic combination of components.
2Measurement precision
If high sensitivity is achieved through radiation-sensitive compounds, then pattern formation quality is improved, but pattern rectangularity deteriorates
Solution Approach 1:
The patent applies local quality by designing the compound structure (formula 1) with specific functional groups (L1, L2, R1-R5) that create localized chemical environments. The acid-generation and release processes occur at specific locations within the polymer matrix, enabling precise control over pattern formation while maintaining rectangularity through localized chemical reactions.
3Productivity
If conventional resist compositions are used to achieve lithographic performance, then sensitivity is improved, but storage stability deteriorates
Solution Approach 1:
The patent applies preliminary action by pre-synthesizing the novel compound (formula 1) with optimized stability characteristics before use in the resist composition. The compound is designed in advance to resist degradation during storage, ensuring that sensitivity is maintained over time. The polymer with acid-releasable groups is also prepared beforehand with stable chemical properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition exhibits high sensitivity, excellent LWR and CDU performance, and pattern rectangularity, ensuring high precision and quality of resist patterns with improved storage stability and lithographic characteristics.
Implementation Method 1
Through exposure to the radiation, an acid is generated, and a chemical reaction involving the acid is evoked
Data Source
AI summary
A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound (Q) represented by formula (1). In the formula (1), L1 represents an ester group, —CO—NR3—, a (thio)ether group, or a sulfonyl group. R4 represents a hydrogen atom, a substituted or unsubstituted C1 to C20 monovalent hydrocarbon group, a halogen atom, a hydroxy group, or a nitro group. R5 represents a C1 to C20 monovalent hydrocarbon group, a C1 to C20 monovalent halogenated hydrocarbon group, or a halogen atom, and optionally two R5s taken together represent an alicyclic structure together with the carbon atom(s) between the two R5s. L2 represents a single bond or a divalent linking group.