Radiation-Sensitive Composition for High-Resolution Lithography
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Solution Overview
Problem
Current photolithography techniques face challenges in achieving high sensitivity, line width roughness (LWR) performance, and over-exposure margins for the formation of fine circuits on semiconductor devices, particularly with the use of short-wavelength radiation and immersion exposure methods.
Innovation Solution
A radiation-sensitive composition is developed, comprising a first polymer with an acid-dissociable group containing an iodo group, a second polymer with a structural unit represented by formula (f1), and a solvent. This composition enhances radiation absorption and secondary electron generation efficiency, improving acid generation and dissolution contrast between exposed and unexposed areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If short-wavelength radiation is used for pattern miniaturization, then resolution is improved, but sensitivity deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the resist material by incorporating fluorine-containing groups and specific polymer structures that enhance radiation absorption efficiency and secondary electron generation, thereby improving sensitivity while maintaining the short-wavelength resolution capability
Solution Approach 2:
The patent uses a composite polymer system combining first polymer (with acid-dissociable group), second polymer (with fluorine-containing group), and third polymer (base polymer) to achieve both high resolution and high sensitivity by leveraging the complementary properties of each component
2Stability of the object's composition
If fluorine-containing polymer is added to control film quality, then film uniformity is improved, but line width roughness performance deteriorates
Solution Approach 1:
The patent applies fluorine-containing groups specifically in the second polymer at controlled concentrations (0.1-10 mass%) to improve film uniformity in specific regions without adversely affecting the overall line width roughness, achieving localized optimization of film properties
Solution Approach 2:
The patent optimizes the concentration parameter of fluorine-containing polymer and the molecular weight parameters of all polymer components to achieve the optimal balance between film uniformity and line width roughness performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves superior sensitivity and LWR performance, along with improved over-exposure margins, leading to the formation of high-quality resist patterns with enhanced film quality and reduced pattern collapse during development.
Implementation Method 1
generating an acid by irradiating the coating of the resist composition with radioactive ray through a mask pattern
Implementation Method 2
enhances radiation absorption and secondary electron generation efficiency, improving acid generation
Implementation Method 3
generate a difference in solubility of polymer into an alkaline or organic developer between an exposed part and a non-exposed part through a reaction in the presence of the acid as a catalyst
Data Source
AI summary
A radiation-sensitive composition includes: a first polymer comprising a structural unit (I) having an acid-dissociable group; a second polymer comprising a structural unit (i) represented by formula (f1); and a solvent. The acid-dissociable group has an iodo group. RK1 is a hydrogen atom, a fluorine atom, or the like; LY1 is a divalent hydrocarbon group having 1 to 10 carbon atoms; LY2 is —COO—* or —OCO—*, *is a bond on an Rf1 side; Rf1 is a monovalent hydrocarbon group having 1 to 10 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; Rf2 and Rf3 are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; s is an integer of 0 to 3, and when Rf1 is the monovalent hydrocarbon group having 1 to 10 carbon atoms, s is an integer of 1 to 3.