Radiation-Sensitive Composition for Resist Pattern LWR
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Solution Overview
Problem
Current radiation-sensitive compositions for semiconductor manufacturing face challenges in achieving high radiation sensitivity, line width roughness (LWR) performance, and pattern profile quality while minimizing development defects.
Innovation Solution
A radiation-sensitive composition comprising a polymer with an acid-releasable group and a compound represented by a specific formula, which includes a (thio)acetal ring structure, is used to form a resist pattern. This composition enhances LWR performance and pattern profile while maintaining high sensitivity and reducing development defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional radiation-sensitive compositions are used, then the photolithography process can be completed, but the line width roughness (LWR) performance and pattern profile quality are insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters of the radiation-sensitive system by introducing a specific compound with formula (1) containing a (thio)acetal ring structure. This compound generates acid upon radiation exposure, which catalyzes the decomposition of the acid-releasable group in the polymer, thereby changing the chemical reaction parameters to achieve superior LWR performance and pattern profile quality
Solution Approach 2:
The patent creates a composite radiation-sensitive composition by combining the polymer with acid-releasable group and the compound of formula (1). This composite material synergistically achieves high radiation sensitivity, excellent LWR performance, and improved pattern profile quality that neither component could achieve alone
2Measurement precision
If radiation sensitivity is increased to form finer patterns, then the resolution improves, but development defects increase
Solution Approach 1:
The compound of formula (1) acts as an intermediary acid generator between the radiation and the polymer. Upon radiation exposure, it generates acid that mediates the decomposition of the acid-releasable group, enabling controlled chemical reactions that improve radiation sensitivity while the specific molecular structure prevents development defects
Solution Approach 2:
The patent changes the chemical parameters by using a polymer with specific acid-releasable groups and combining it with the acid generator of formula (1). This parameter change enables the system to achieve high radiation sensitivity for finer pattern formation while the specific chemical structure prevents development defects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed composition achieves excellent LWR performance and pattern profile with high sensitivity, reducing development defects and enabling the formation of finer, more accurate resist patterns.
Implementation Method 1
a compound represented by formula (1)... which generates acid upon radiation exposure
Implementation Method 2
the acid generated by the irradiation causes a difference in a dissolution rate... a chemical reaction with an acid generated by the irradiation with radiation
Implementation Method 3
causes a difference in a dissolution rate in a developer liquid between an exposed portion and an unexposed portion in the resist film
Data Source
AI summary
A radiation-sensitive composition contains a polymer having an acid-releasable group, and a compound represented by formula (1). In the formula (1), L1 represents a group having a (thio)acetal ring or the like. W1 represents a single bond or a (b+1)-valent organic group having 1 to 40 carbon atoms. R1, R2, and R3 each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a fluorine atom, or a fluoroalkyl group. Rf represents a fluorine atom or a fluoroalkyl group. a represents an integer of 0 to 8. b represents an integer of 1 to 4. d represents 1 or 2. When a represents 2 or more, a plurality of R1 are the same or different, and a plurality of R2 are the same or different. M+ represents a monovalent cation.