Radiation-Sensitive Resin Composition for Balanced Sensitivity and LWR
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Solution Overview
Problem
Current radiation-sensitive resin compositions face challenges in achieving balanced sensitivity, mask linearity, and LWR (Line Width Roughness) due to the trade-offs between acid strength, diffusion length, and solubility, particularly with fluorine-containing acid generators that compromise pattern quality.
Innovation Solution
A radiation-sensitive resin composition incorporating a compound with a specific partial structure that generates a sulfonic acid with high acidity and moderate diffusion length, combined with an acid-dissociable group-containing resin, to achieve balanced sensitivity and pattern quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a radiation-sensitive acid generator with high fluorine content (e.g., trifluoromethanesulfonyl or nonafluorobutanesulfonyl structure) is used to generate strong acid, then sensitivity is improved, but mask linearity and LWR deteriorate due to long diffusion length and poor mutual solubility with acid-dissociable group-containing resin
Solution Approach 1:
The patent modifies the chemical structure parameters of the radiation-sensitive acid generator by replacing some fluorine atoms with hydrogen atoms or smaller alkyl groups, while maintaining the sulfonyl core structure. This parameter change reduces the diffusion length of the generated acid and improves mutual solubility with the resin, thereby improving mask linearity and LWR while maintaining adequate sensitivity
Solution Approach 2:
The patent creates a composite system combining the modified radiation-sensitive acid generator with acid-dissociable group-containing resin, where the generator structure is specifically designed to achieve optimal balance between acid strength, diffusion length, and solubility. The composite formulation ensures synergistic effects that resolve the contradiction between sensitivity and pattern quality
2Manufacturing precision
If a radiation-sensitive acid generator with large organic group (e.g., 10-camphorsulfonyl structure) is used to achieve short diffusion length and good mutual solubility, then mask linearity and LWR are improved, but sensitivity deteriorates due to insufficient acid strength
Solution Approach 1:
The patent adjusts the structural parameters of the acid generator by optimizing the size and composition of organic groups attached to the sulfonyl moiety. The design balances the steric effects (which control diffusion length) with the electronic effects (which control acid strength), achieving both good mask linearity and adequate sensitivity
Solution Approach 2:
The patent introduces an intermediary structural element - a modified sulfonyl group with specific organic substituents - that mediates between the conflicting requirements of acid strength and diffusion control. This intermediary structure provides optimal balance by controlling both the electronic properties (acid strength) and steric properties (diffusion length) simultaneously
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves improved sensitivity, mask linearity, and reduced LWR by optimizing acid strength and solubility, enabling precise microfabrication with deep ultraviolet rays.
Implementation Method 1
a radiation-sensitive acid generator that generates an acid upon irradiation (exposure)
Implementation Method 2
ensure that the generated acid has an appropriate diffusion distance (diffusion length) in a resist film
Data Source
AI summary
A compound has a partial structure shown by a following formula (1),wherein R1 represents a hydrogen atom or a substituted or unsubstituted hydrocarbon group having 1 to 8 carbon atoms, R2 represents a substituted or unsubstituted hydrocarbon group having 1 to 8 carbon atoms, Rf represents a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms, L represents an integer from 0 to 4, n represents an integer from 0 to 10, and m represents an integer from 1 to 4.