High Emissivity Radiation Shield for Substrate Temperature Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor processing systems face challenges in achieving uniform substrate temperature, leading to variations in film properties such as extinction coefficient, which can impact device quality and performance.
Innovation Solution
Incorporating a radiation shield or pumping plate with high emissivity values, configured to enhance heat absorption and control temperature distribution across the substrate, thereby reducing temperature non-uniformity and improving film uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a radiation shield or pumping plate with high emissivity is incorporated, then temperature uniformity across the substrate is improved, but device complexity increases
Solution Approach 1:
A radiation shield or pumping plate with high emissivity (greater than 0.5) is introduced as an intermediary component between the substrate support and the chamber environment. This plate acts as a thermal mediator that absorbs and redistributes radiant heat, reducing temperature non-uniformity across the substrate without requiring fundamental changes to the substrate support structure or heating system.
2Temperature
If the emissivity of the plate is increased to improve temperature control, then temperature uniformity is improved, but heat loss to the chamber base increases
Solution Approach 1:
The plate is designed with spatially varying emissivity characteristics. The upper surface facing the substrate support has high emissivity (greater than 0.5) to effectively absorb radiant heat and promote temperature uniformity, while the lower surface facing the chamber base has reduced emissivity to minimize heat loss to the chamber environment. This local differentiation of thermal properties allows simultaneous achievement of temperature control and energy conservation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes temperature variations across the substrate to less than 3°C, ensuring uniform film deposition and improved film properties like extinction coefficient, enhancing the quality and consistency of semiconductor devices.
Implementation Method 1
the plate may have an emissivity greater than 0.5... the plate may include a radiation shied disposed proximate the support platen... configured to enhance heat absorption
Data Source
AI summary
An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.