Radioisotope Battery Shield Layer and Source Trench Design

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Solution Overview

Problem

Existing radioisotope batteries face challenges in maximizing electron-hole pair generation per unit volume using limited radiation sources, which affects their efficiency and longevity.

Innovation Solution

A radioisotope battery design incorporating a shield layer with nickel-62 (62Ni) formed by LPCVD, a source layer with nickel-63 (63Ni) embedded in a trench recessed toward the substrate, a PN junction layer with sequentially stacked n-type and p-type semiconductor layers, and a window layer to optimize radiation penetration and electron-hole pair generation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a shield layer with nickel-62 is introduced to block harmful radiation, then safety is improved, but device complexity increases

Engineering Contradiction:
ImprovesafetyVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The battery structure is segmented into distinct functional layers: a shield layer containing nickel-62 for radiation blocking, a source layer with nickel-63 for radiation generation, a window layer for selective radiation transmission, and a PN junction layer for energy conversion. This segmentation allows each layer to perform its specific function optimally while maintaining overall safety and efficiency.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The window layer acts as an intermediary between the source layer and PN junction layer, selectively transmitting beneficial radiation while blocking harmful portions. The shield layer serves as an intermediary protective barrier between the radiation source and external environment, absorbing harmful radiation types.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Quantity of substance

If the source layer is embedded in a trench recessed toward the substrate, then energy density is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveenergy densityVSAvoidmanufacturing precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The source layer is positioned in a trench recessed toward the substrate, utilizing the vertical dimension to maximize the amount of radioisotope material that can be contained within a given footprint. This three-dimensional arrangement increases energy density by effectively using available space rather than relying solely on surface area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If a window layer is positioned between the PN junction layer and source layer to optimize radiation penetration, then electron-hole pair generation efficiency is improved, but device complexity increases

Engineering Contradiction:
Improveelectron-hole pair generation efficiencyVSAvoiddevice complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The window layer is positioned specifically at the interface where radiation transitions from the source layer to the PN junction layer, providing localized optimization of radiation penetration. This layer has specific material properties tailored for transmitting beneficial radiation while blocking harmful portions, enhancing electron-hole pair generation efficiency at the critical interface region.

Inventive Principle:
Principle #3Local quality

4Power

If multiple semiconductor layers with different doping concentrations are stacked to form the PN junction layer, then power output is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvepower outputVSAvoidmanufacturing complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The PN junction layer comprises multiple semiconductor layers with varying doping concentrations, where the first n-type semiconductor layer has a higher doping concentration than the second n-type semiconductor layer and the p-type semiconductor layer. This gradient in doping parameters optimizes charge carrier generation and collection, enhancing power output while maintaining manufacturability through standard semiconductor fabrication processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances the efficiency and safety of radioisotope batteries by improving electron-hole pair generation, leading to improved energy density and extended service life while being easily manufacturable and miniaturizable.

Implementation Method 1

a shield layer disposed on the substrate and including a first material

Methodology Applied
Scientific EffectRadiation shielding: Absorption (EM radiation)

Implementation Method 2

a source layer embedded in the shield layer and including a second material which is a radioisotope of the first material

Methodology Applied
Scientific EffectBeta decay radiation: Radioactive Decay

Implementation Method 3

Radioisotope batteries are batteries which produce electrical charges inside a semiconductor using radiation generated by radioisotopes

Methodology Applied
Scientific EffectElectron-hole pair generation: Photoelectric Effect

Implementation Method 4

the shield layer may include nickel-62 (62Ni) formed by a low pressure chemical vapor deposition (LPCVD) process, and the source layer may include nickel-63 (63Ni) formed by a LPCVD process

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS11508492B2Radioisotope battery
Publication Date: 2022.11.22 ELECTRONICS & TELECOMM RES INST
  • US11508492B2 patent drawing
  • US11508492B2 patent drawing
  • US11508492B2 patent drawing

AI summary

Provided is a radioisotope battery. A radioisotope battery according to exemplary embodiments may include: a substrate; a shield layer disposed on the substrate and including a first material; a source layer embedded in the shield layer and including a second material which is a radioisotope of the first material; a PN junction layer on the shield layer and the source layer; and a window layer between the PN junction layer and the source layer.