Rapid Thermal Cooling for Narrow Spike Anneal Peak Width
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Solution Overview
Problem
Current rapid thermal processing systems face challenges in tightly controlling the temperature profile during spike anneal processes for semiconductor workpieces, leading to excessive dopant diffusion and reduced precision in activating dopants.
Innovation Solution
A thermal processing system with a cooling system that supplies a flow of cooling gas at a rate of 300 slm or greater, reducing the t50 peak width by controlling the heat source and cooling system based on temperature data, and utilizing a quartz cooling system design to minimize contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a cooling system is added to control temperature profile, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The cooling system is segmented into multiple independent cooling zones along the wafer radius, with each zone having its own cooling gas flow control. This allows precise local temperature control to manage dopant diffusion profiles while maintaining manageable system complexity through modular design.
Solution Approach 2:
The system changes the cooling gas flow rate parameter dynamically during the annealing process, adjusting it based on the heating phase and desired temperature profile. This parameter control enables precise temperature management without requiring complex mechanical adjustments.
2Manufacturing precision
If cooling gas flow rate is increased to reduce t50 peak width, then manufacturing precision is improved, but loss of energy increases
Solution Approach 1:
The cooling gas flow is applied periodically rather than continuously - it is activated during specific phases of the annealing process (such as during rapid thermal cooling phases) and deactivated during heating phases. This periodic application reduces overall gas consumption while maintaining precise t50 peak width control when needed.
Solution Approach 2:
The system performs preliminary heating to the target temperature before activating the cooling gas flow. This allows the wafer to reach the desired temperature without excessive cooling intervention, reducing energy loss from continuous high-rate cooling gas flow while still achieving precise peak width control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system achieves precise temperature control during spike anneal processes, reducing dopant diffusion and enhancing the activation of dopants while maintaining high-temperature annealing efficiency.
Implementation Method 1
a cooling system configured to flow a cooling gas over the workpiece supported on the workpiece support
Implementation Method 2
an energy source for heating the workpieces, such as heating lamps, lasers, or other heat sources
Data Source
AI summary
Apparatus, systems, and methods for processing workpieces are provided. In one example, such a method for performing a spike anneal rapid thermal process may include controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber. The method may further include receiving data indicative of a temperature of the workpiece. Furthermore, the method may include monitoring the temperature of the workpiece relative to a temperature setpoint. Moreover, the method may include controlling the heat source to stop heating the workpiece based at least in part on the workpiece reaching the temperature setpoint. Additionally, the method may include controlling a cooling system to begin flowing a cooling gas at a rate of about 300 slm or greater over the workpiece based at least in part on the workpiece reaching the temperature setpoint to reduce a t50 peak width of the workpiece.