Rare Earth Organometallic ALD Precursor for Thin Film Uniformity
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Solution Overview
Problem
Existing methods for depositing rare earth thin films face challenges such as high melting points of precursors, low deposition temperatures, high impurities, and difficulty in maintaining uniform composition in high aspect ratio structures.
Innovation Solution
A thin film formation method using atomic layer deposition (ALD) with an organometallic precursor compound represented by Formula 1, which includes a rare earth element and silicon, to efficiently deposit thin films with excellent properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If existing rare earth precursors are used for deposition, then deposition can be performed, but the precursors have high melting points and require low deposition temperatures which limits process flexibility
Solution Approach 1:
The patent introduces new rare earth precursor compounds with modified chemical structures that have lower melting points and higher volatility compared to existing precursors. This parameter change in the precursor properties enables deposition at higher temperatures and provides greater process flexibility while maintaining film quality
2Manufacturing precision
If conventional deposition methods are used, then thin films can be formed, but the films contain high impurity levels which degrades device performance
Solution Approach 1:
The patent extracts and eliminates harmful ligand residues from the deposition process by using precursors with optimized ligand structures that decompose completely during deposition. This extraction of harmful byproducts results in ultra-low impurity levels in the deposited films while maintaining high manufacturing precision
Solution Approach 2:
The patent employs oxygen plasma or ozone as strong oxidizing agents during the deposition process to completely oxidize and remove carbon-containing impurities from the film. This accelerated oxidation process ensures ultra-low impurity levels and high film quality
3Manufacturing precision
If standard ALD processes are used for rare earth deposition, then films can be deposited, but uniform composition in high aspect ratio structures is difficult to maintain
Solution Approach 1:
The patent uses precursors with enhanced volatility and reactivity that can rapidly and uniformly deposit on complex high aspect ratio structures before diffusion or aggregation can occur. This preliminary action ensures uniform composition distribution even in structurally complex devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high thickness uniformity, low impurity levels, and excellent electrical characteristics, making it suitable for applications in high K/metal gates, DRAM capacitors, perovskite materials, and next-generation memories.
Implementation Method 1
depositing a thin film on a substrate by repeatedly performing a cycle including: primarily injecting an organometallic precursor compound into a chamber
Implementation Method 2
secondarily injecting a reactive gas into the chamber, and secondarily purging a by-product produced by a reaction with the organometallic precursor compound
Data Source
AI summary
The present disclosure relates to a method of forming a thin film having excellent properties by depositing an organometallic compound (particularly, an organometallic compound containing rare earth metals) and to a thin film formed thereby.