Rare Earth Alkoxide Precursors for Low-Carbon ALD Thin Films
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Solution Overview
Problem
Existing thin-film forming raw materials containing rare earth metal atoms do not adequately produce high-quality thin-films with high productivity, particularly in methods like ALD, and have high residual carbon content.
Innovation Solution
An alkoxide compound with a specific structure, represented by the general formula (R1-R4 = alkyl groups of 1-5 carbon atoms, M = rare earth metal atom, and n = valence) is used to form high-quality thin-films with low residual carbon content and high productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional thin-film forming raw materials are used, then thin-film formation is possible, but the residual carbon content is high and film quality is insufficient
Solution Approach 1:
The patent changes the chemical parameters of the raw material by using alkoxide compounds with specific alkyl groups (methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, or tert-butyl) instead of conventional organic metal compounds. This parameter change in the molecular structure leads to complete decomposition during thin-film formation, eliminating residual carbon and achieving high film quality with low carbon content.
2Productivity
If conventional raw materials are used, then thin-film formation can proceed, but productivity is low
Solution Approach 1:
The patent changes the chemical composition parameters of the raw material to alkoxide compounds that decompose completely at lower temperatures without leaving carbon residues. This enables faster processing cycles and higher deposition rates while maintaining high film quality, thereby improving productivity without sacrificing manufacturing precision.
3Adaptability or versatility
If existing rare earth metal compounds are used, then thin-film formation is achievable, but the material does not satisfy ALD method requirements
Solution Approach 1:
The patent modifies the chemical parameters of rare earth metal compounds by converting them to alkoxide forms with specific alkyl groups. These modified compounds exhibit appropriate volatility and reactivity characteristics required for ALD processes, enabling precise layer-by-layer deposition while maintaining high film quality and low residual carbon content.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The alkoxide compound enables the production of high-quality thin-films with rare earth metal atoms, suitable for ALD methods, achieving low residual carbon content and improved productivity.
Implementation Method 1
In a method including vaporizing a compound to form a thin-film such as the CVD method
Implementation Method 2
a chemical vapor deposition (CVD) method
Implementation Method 3
metal-organic decomposition (MOD) methods, such as a coating thermal decomposition method
Data Source
AI summary
Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1):where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and “n” represents a valence of the rare earth metal atom.