Rare Earth Doped Bismuth Telluride Thermoelectric Material
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Solution Overview
Problem
Current P-type bismuth telluride-based materials have limited thermoelectric performance at room temperature, with a ZT value of about 1, and face challenges in processing difficulty and low yield.
Innovation Solution
A P-type bismuth telluride-based material is developed using Bi0.4Sb1.6Te3 as a matrix, doped with a rare earth element to adjust carrier concentration and mobility, and prepared through a method involving melting, ball-milling, and sintering, followed by thermal deformation treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional P-type bismuth telluride-based materials are used, then the material can be processed with existing methods, but the ZT value is limited to about 1 and processing difficulty is high
Solution Approach 1:
The patent changes the compositional parameters by introducing rare earth element doping (M = La, Ce, Yb, or Lu) at controlled concentrations (0 < x ≤ 0.1) in the Bi0.4Sb1.6Te3 matrix. This parameter modification optimizes carrier concentration and mobility, achieving ZT values of 1.2-1.5 at room temperature while maintaining processability through established melting and sintering techniques.
2Reliability
If carrier concentration is increased to improve thermoelectric performance, then ZT value increases, but processing complexity increases
Solution Approach 1:
The patent combines multiple functions into a single doping element: rare earth elements simultaneously adjust carrier concentration, modify energy band structure, and enhance carrier mobility. This merging of multiple optimization goals into one compositional parameter simplifies the processing approach compared to multiple separate modification steps.
3Reliability
If industrialized P-type bismuth telluride-based material is used, then the material is commercially available, but the ZT value is only about 1 and yield is low
Solution Approach 1:
The patent modifies the compositional parameters by introducing rare earth element doping (M = La, Ce, Yb, or Lu) at controlled concentrations (0 < x ≤ 0.1) in the Bi0.4Sb1.6Te3 matrix. This parameter modification optimizes carrier concentration and mobility, achieving ZT values of 1.2-1.5 at room temperature while maintaining processability through established melting and sintering techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped P-type bismuth telluride-based material exhibits enhanced thermoelectric performance with a ZT value increased by 5-42% compared to the matrix, and achieves a ZT value of up to 1.46 at 373 K, while simplifying the processing method.
Implementation Method 1
the carrier concentration is adjusted by a rare earth element to enhance the carrier mobility
Implementation Method 2
by utilizing the valence electron structure of the rare earth atom, the energy band structure of the P-type bismuth telluride-based material is improved
Implementation Method 3
a large atomic mass difference between the rare earth atom and the Sb atom provides a mass potential field, enhancing the phonon scattering probability, and reducing lattice thermal conductivity
Implementation Method 4
The P-type bismuth telluride-based material is obtained from a rare earth material, a Sb source, a Te source and a Bi source by melting, ball milling and sintering
Implementation Method 5
The P-type bismuth telluride-based material is obtained from a rare earth material, a Sb source, a Te source and a Bi source by melting, ball milling and sintering
Implementation Method 6
The P-type bismuth telluride-based material is obtained from a rare earth material, a Sb source, a Te source and a Bi source by melting, ball milling and sintering
Data Source
AI summary
Disclosed in the present disclosure are a P-type bismuth telluride-based material and a method for preparing the P-type bismuth telluride-based material. The P-type bismuth telluride-based material is doped with a rare earth element, and prepared from a rare earth material, a Sb source, a Te source and a Bi source by melting, ball milling and sintering. An outer layer atomic orbital of the rare earth element can greatly improve the energy band structure of a matrix phase. At the same time, a large atomic difference between a rare earth atom and a Sb atom is utilized to provide a mass potential field, enhancing the phonon scattering probability, and reducing lattice thermal conductivity, and the double action of the rare earth element synergistically enhances the thermoelectric performance of the P-type bismuth telluride-based material.