Ion-Assisted Rare-Earth Oxide Coatings on Process Rings
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Solution Overview
Problem
Current process kit rings in the semiconductor industry suffer from high erosion rates and plasma chemistry interactions, leading to on-wafer particle defects, process shifts, and reduced chamber yield due to their materials (quartz and Si) being susceptible to corrosive plasma environments.
Innovation Solution
Application of a thin film plasma-resistant protective layer using ion-assisted deposition (IAD) techniques, specifically rare earth oxides such as Y3Al5O12, Y4Al2O9, Er2O3, and Gd2O3, which are applied to chamber components like process kit rings to enhance erosion resistance and extend their service life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If quartz or Si rings are used for process kit, then the rings can be made with simple material composition, but the erosion rate becomes very high under etch chemistries and bias powers
Solution Approach 1:
The patent applies composite materials by depositing a plasma-resistant coating layer (such as amorphous carbon, silicon nitride, or silicon oxide) onto the quartz or Si ring substrate. This creates a composite structure where the base material provides structural integrity while the coating layer provides erosion resistance against corrosive plasma chemistries and bias powers, thereby resolving the contradiction between simple material composition and high erosion resistance.
2Duration of action of stationary object
If thick protective coating is applied to increase erosion resistance, then the service life is extended, but the coating deposition time and process complexity increase
Solution Approach 1:
The patent employs parameter changes by optimizing the deposition conditions (such as deposition rate, coating thickness, and plasma power) to achieve the minimum effective coating thickness that provides sufficient erosion resistance. By carefully controlling these parameters, the patent extends the service life of the rings while minimizing the coating deposition time and avoiding excessive process complexity.
3Object-generated harmful factors
If plasma-resistant coating is applied to reduce erosion, then the erosion bi-product deposition on other chamber components is reduced, but the coating process adds manufacturing steps
Solution Approach 1:
The patent applies the extraction principle by removing the harmful erosion function from the system through the protective coating. The coating layer acts as a barrier that prevents the ring material from eroding and generating bi-products that would deposit on other chamber components. This extracts the harmful erosion effect while maintaining the structural function of the rings, thereby reducing contamination without fundamentally changing the manufacturing approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thin film protective layers significantly reduce erosion rates, minimize on-wafer defects, and maintain plasma uniformity, thereby improving the operational lifespan of chamber components and reducing maintenance and manufacturing costs.
Implementation Method 1
application of a thin film plasma-resistant protective layer using ion-assisted deposition (IAD) techniques
Implementation Method 2
The plasma may be highly corrosive, and may corrode processing chambers and other surfaces that are exposed to the plasma
Implementation Method 3
performance issues because of high erosion rate and plasma chemistry interaction
Data Source
AI summary
A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer is disposed on at least the top flat region, the ring inner side and the ring outer side of the ring shaped body. The protective layer has a first thickness of less than 300 μm on the top flat region and a second thickness on the vertical wall of the ring inner side, where the second thickness is 45-70% of the first thickness.