Rare-Earth Oxide Coatings With Interruption Layers for Grain Control
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Solution Overview
Problem
Semiconductor process chamber components are susceptible to defects due to exposure to high temperatures, high energy plasma, corrosive gases, and high stress, leading to erosion and corrosion. Existing protective coatings often develop abnormally large crystal grains, increasing surface roughness and providing pathways for chemical diffusion.
Innovation Solution
A plasma resistant protective coating comprising a stack of alternating layers of crystalline rare-earth oxide layers and crystalline or amorphous metal oxide layers is deposited using atomic layer deposition (ALD) or chemical vapor deposition (CVD). The crystalline rare-earth oxide layers, such as yttrium oxide, are paired with metal oxide layers that inhibit grain growth, ensuring a controlled and uniform coating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If protective coatings are deposited using conventional techniques, then protective coverage is achieved, but abnormally large crystal grains form increasing surface roughness and providing diffusion pathways
Solution Approach 1:
The coating is segmented into alternating layers of rare-earth oxide and metal oxide, where each layer thickness is controlled to prevent abnormal grain growth while maintaining protective functionality
Solution Approach 2:
The patent changes the compositional parameters by introducing metal oxide layers with different crystalline phases and controlled thicknesses (1-500 nm) to inhibit grain growth in the rare-earth oxide layers
2Reliability
If conventional deposition techniques are used, then coating is applied, but abnormally large crystal grains create pathways for chemical diffusion
Solution Approach 1:
The coating structure is segmented into multiple alternating layers that interrupt continuous grain boundaries, thereby blocking chemical diffusion pathways while maintaining overall coating integrity
Solution Approach 2:
The metal oxide layers act as intermediary barriers between rare-earth oxide layers, preventing direct grain boundary continuity and blocking chemical diffusion through the coating
3Ease of manufacture
If single-layer protective coatings are deposited, then simple application is achieved, but grain growth control is insufficient
Solution Approach 1:
The patent uses composite material structure with alternating rare-earth oxide and metal oxide layers, where the combination of different materials with distinct crystalline phases enables effective grain growth control while maintaining manufacturability through established deposition techniques
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The coating effectively prevents defects in semiconductor process chamber components by maintaining surface smoothness, preventing chemical diffusion, and enhancing resistance to erosion and corrosion, thus extending the lifespan of the components.
Implementation Method 1
depositing a plasma resistant protective coating onto a surface of an article using an atomic layer deposition (ALD) process
Implementation Method 2
depositing a plasma resistant protective coating onto a surface of an article using an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process
Implementation Method 3
The crystalline or amorphous metal oxide layers may inhibit grain growth in the crystalline yttrium oxide layers
Data Source
AI summary
Disclosed herein is a rare-earth oxide coating on a surface of an article with one or more interruption layers to control crystal growth and methods of its formation. The coating may be deposited by atomic layer deposition and/or by chemical vapor deposition. The rare-earth oxides in the coatings disclosed herein may have an atomic crystalline phase that is different from the atomic crystalline phase or the amorphous phase of the one or more interruption layers.