Rare-Earth Doped ITZO Thin-Film Transistors for Light Stability
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Solution Overview
Problem
The stability of oxide semiconductor thin-film transistors, particularly under illumination, is compromised due to abundant oxygen vacancies in traditional indium tin zinc oxide (ITZO) materials, which affect electrical stability and mobility.
Innovation Solution
Doping indium tin oxide or indium tin zinc oxide with praseodymium or ytterbium oxide at specific molar ratios creates recombination centers for photo-induced carriers, suppressing oxygen vacancies and enhancing mobility, resulting in improved electrical stability and light resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional ITZO material is used, then high carrier density is achieved, but electrical stability under illumination deteriorates due to abundant oxygen vacancies
Solution Approach 1:
The patent changes the chemical composition parameters by introducing rare-earth elements (praseodymium and/or ytterbium) at specific molar ratios (0.002:1 to 0.4:1) to modify the electronic structure and create recombination centers, thereby improving electrical stability while maintaining carrier density
Solution Approach 2:
The patent creates a composite material system by combining traditional ITZO (indium tin oxide or indium tin zinc oxide) with rare-earth oxides (praseodymium oxide and/or ytterbium oxide), forming a doped metal oxide semiconductor that exhibits both high carrier density and improved electrical stability
2Reliability
If doping amount of rare-earth oxide is increased, then electrical stability is improved, but mobility may deteriorate
Solution Approach 1:
The patent optimizes the doping concentration parameter within a specific range (0.002:1 to 0.4:1 molar ratio) to achieve the optimal balance between electrical stability and mobility, where sufficient doping creates recombination centers for stability while excessive doping is avoided to maintain mobility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doped metal oxide semiconductors maintain high mobility and exhibit excellent stability under illumination, with a suitable doping ratio balancing mobility and photo-current effects, ensuring reliable performance in thin-film transistors.
Implementation Method 1
there are recombination centers for photo-induced carriers generated in the doped metal oxide semiconductor
Data Source
AI summary
The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.