Rare-Earth Oxide Ceramic for Plasma Etch Chamber
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional plasma-resistant ceramic materials used in semiconductor manufacturing processes, such as plasma etch and plasma clean processes, fail to adequately prevent particle defects and metal contamination, especially at device geometries below 90 nm, leading to increased susceptibility to defects and stringent contamination specifications.
Innovation Solution
Development of solid sintered ceramic materials comprising 80-90 mol % Y2O3, 0-20 mol % ZrO2, and 10-20 mol % Al2O3, which are used to create chamber components for plasma etch reactors, reducing metal contamination and particle defects by forming a plasma-resistant coating or as a bonded metal-ceramic composite.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional ceramic manufacturing processes are used to produce plasma resistant ceramic lids and nozzles, then the materials provide basic plasma resistance, but they generate unacceptable levels of particle defects when used in plasma etch processes of semiconductor devices with critical dimensions of 90 nm or lower
Solution Approach 1:
The patent changes the chemical composition parameters of the ceramic material by incorporating specific ratios of Y2O3 (60-80 wt%), ZrO2 (5-20 wt%), and Al2O3 (10-30 wt%), along with controlled levels of SiO2 and other oxides. This compositional parameter change resolves the contradiction by achieving both plasma resistance and reduced particle defect generation, making the material suitable for sub-90 nm semiconductor devices
Solution Approach 2:
The patent creates a composite ceramic material by combining multiple oxide components (Y2O3, ZrO2, Al2O3, SiO2, and trace elements) in specific proportions. This composite approach resolves the technical contradiction by synergistically achieving plasma resistance from the ceramic structure while minimizing particle defect generation through the specific combination of materials that reduce contamination during plasma etching
2Productivity
If conventional ceramic materials are used in plasma etch and plasma clean processes, then the processes can be performed, but metal atoms from chamber components contaminate processed substrates and generate particles that contribute to device defects
Solution Approach 1:
The patent modifies the material composition parameters to create a ceramic that is resistant to plasma corrosion while minimizing metal atom release. The specific composition with Y2O3 (60-80 wt%), ZrO2 (5-20 wt%), and Al2O3 (10-30 wt%) changes the material's interaction with plasma, reducing harmful metal contamination and particle generation while maintaining plasma process capability
Solution Approach 2:
The patent converts the potentially harmful interaction between plasma and ceramic material into a beneficial outcome. By carefully selecting the ceramic composition, the material that would normally corrode and release contaminants under plasma exposure instead becomes resistant to plasma attack, transforming the harmful plasma-ceramic interaction into a protective effect that eliminates contamination while maintaining productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new ceramic materials significantly reduce on-wafer metal contamination and particle defects, meeting stringent specifications for semiconductor devices, displays, and other plasma-exposed components, enhancing the reliability of plasma etch and clean processes.
Implementation Method 1
Rare-earth oxide based chamber material resistant to plasma corrosion
Implementation Method 2
solid sintered ceramic articles formed from the plasma resistant rare-earth oxide materials
Data Source
AI summary
An article comprises a plasma resistant ceramic material comprising Y2O3 at a concentration of approximately 30 molar % to approximately 60 molar %, Er2O3 at a concentration of above 30 molar % to approximately 60 molar %, and at least one of ZrO2, Gd2O3 or SiO2 at a concentration of over 0 molar % to approximately 30 molar %.