Rare Earth Oxide Insulator Optical Modulator
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Solution Overview
Problem
Conventional optical phase modulators are inefficient, bulky, and have high loss, with silicon MOS capacitor-type modulators facing challenges in volume manufacturing due to high drive voltage and optical losses.
Innovation Solution
A capacitor-type optical MOS modulator with an epitaxially grown crystalline rare earth oxide (REO) insulator, comprising a p-doped region and an n-doped region, fabricated on a silicon-on-insulator (SOI) substrate, which reduces losses and enables efficient volume manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional depletion-type silicon modulators are used, then device length can be reduced, but VπL increases greater than 2 V*cm and insertion loss increases greater than 4 dB
Solution Approach 1:
The patent changes the material parameter from conventional silicon to III-V semiconductor material, which fundamentally alters the optical confinement and carrier plasma dispersion effects. This material parameter change enables simultaneous achievement of short device length and low insertion loss by improving the figure of merit through intrinsic material properties rather than geometric scaling
Solution Approach 2:
The patent employs composite material structure by integrating III-V semiconductor material with silicon photonic platform. This composite approach combines the advantages of III-V materials (high nonlinearity, low loss) with silicon platform benefits (complementary metal-oxide-semiconductor compatibility, existing manufacturing infrastructure), achieving low VπL and low insertion loss together
2Loss of energy
If III-V Si MOS capacitor-type modulators are used, then efficiency improves and loss decreases, but suitability for high volume manufacture deteriorates
Solution Approach 1:
The patent makes the III-V modulator structure universal to the silicon photonic platform by using standard complementary metal-oxide-semiconductor fabrication processes. The device can be manufactured using existing silicon foundry capabilities, making it multi-functional across different production contexts and suitable for high-volume manufacturing while maintaining low loss performance
Solution Approach 2:
The patent segments the fabrication process into distinct layers and steps that can be independently optimized and manufactured. The III-V material is integrated as a specific layer within the broader silicon photonic device structure, allowing specialized regions to be fabricated with precise control while maintaining overall process compatibility with high-volume manufacturing
3Device complexity
If poly crystalline silicon is used in MOS capacitor modulators, then device complexity is reduced, but optical loss increases
Solution Approach 1:
The patent changes the material phase parameter from poly crystalline to single crystalline structure. This parameter change eliminates grain boundaries and dislocations inherent in poly crystalline materials, thereby reducing optical scattering and absorption losses while maintaining the electrical functionality of the MOS capacitor structure
Solution Approach 2:
The patent copies the successful MOS capacitor modulator design concept but implements it with improved single crystalline III-V material instead of poly crystalline silicon. This copying approach preserves the proven device architecture while substituting the material to eliminate the loss mechanism associated with poly crystalline structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modulator achieves high efficiency and low loss while being suitable for volume manufacturing, with crystalline REO providing a better gate material and high dielectric constant, and the epitaxial growth process improving device structure and manufacturing feasibility.
Implementation Method 1
A capacitor-type optical MOS modulator with an epitaxially grown crystalline rare earth oxide (REO) insulator, comprising a p-doped region and an n-doped region
Implementation Method 2
an insulator formed of an epitaxially grown crystalline rare earth oxide (REO)
Data Source
AI summary
A MOS capacitor-type optical modulator and method of fabricating a MOS capacitor-type optical modulator, wherein the MOS capacitor-type optical modulator has a MOS capacitor region which comprises an insulator formed of an epitaxially grown crystalline rare earth oxide (REO).