Rare-Earth Implanted Semiconductor Layer for Lower Switching Loss
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Solution Overview
Problem
Existing methods to reduce switching loss in semiconductor diodes by forming low-lifetime layers increase conduction loss, and are constrained by process complexity and cost, especially when integrated with IGBTs.
Innovation Solution
A semiconductor device with a crystal defect region formed by ion-implanting a rare-earth element, followed by heat treatment, to locally control carrier recombination and reduce switching loss without significantly increasing conduction loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If ion-implanting a rare-earth element and heat treatment are performed to form a crystal defect region, then switching loss is reduced while maintaining low conduction loss, but process complexity increases
Solution Approach 1:
The patent merges multiple functions into a single ion implantation process. The ion implantation of rare-earth elements simultaneously achieves: (1) formation of crystal defects through displacement damage, (2) introduction of impurity regions for electrical property control, and (3) depth-selective modification. This consolidation reduces the number of separate process steps compared to conventional methods while achieving the desired crystal defect region formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for effective reduction in switching loss while maintaining low conduction loss, enabling efficient operation of semiconductor diodes and integrated IGBTs.
Implementation Method 1
ion-implanting a rare-earth element
Implementation Method 2
followed by heat treatment
Implementation Method 3
a concentration peak of the rare-earth element being in the impurity region
Implementation Method 4
locally control carrier recombination and reduce switching loss
Data Source
AI summary
A semiconductor device includes a first electrode; a semiconductor layer located on the first electrode; and a second electrode located on the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a rare-earth element, and a second semiconductor layer located on the first semiconductor layer and electrically connected with the second electrode, the second semiconductor layer contacting the first semiconductor layer. The first semiconductor layer includes an impurity region positioned between the second semiconductor layer and the first electrode, and a crystal defect region positioned between the impurity region and the first electrode. The crystal defect region includes crystal defects. A concentration peak of the rare-earth element is in the impurity region.