Ray Detector Using 2D Semiconductor Material for Flexible Sensing
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Solution Overview
Problem
Existing ray detectors using silicon-based PIN diodes have low sensitivity and are not adaptable to varying shapes due to their rigidity and high carrier mobility limitations, requiring high-intensity ray sources and being costly and cumbersome.
Innovation Solution
A ray detector employing a two-dimensional semiconductor material for the photoelectric conversion layer, which enhances carrier mobility and toughness, allowing for lower energy ray detection and flexible, bendable designs that can adjust to object shapes, improving sensitivity and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon-based PIN diode is used as the photosensitive element, then the device structure is simple and mature, but the carrier mobility is low and sensitivity is insufficient
Solution Approach 1:
The patent changes the material parameter of the photosensitive element from conventional silicon-based PIN diode to two-dimensional semiconductor material (such as MoS2, WS2, WSe2, MoSe2). This material substitution fundamentally alters the carrier mobility parameter, enabling higher sensitivity and allowing the use of lower intensity ray sources while maintaining detection performance.
Solution Approach 2:
The patent employs a composite structure combining two-dimensional semiconductor material with other functional layers (substrate, electrode layers, protective layers). This composite approach leverages the superior carrier mobility of two-dimensional materials while integrating them into a practical detector device structure that maintains manufacturability and performance.
2Ease of operation
If a hard material such as glass substrate is used, then the device has high structural stability, but the device is cumbersome and cannot be bendably adjusted
Solution Approach 1:
The patent replaces traditional hard glass substrates with flexible substrates, enabling the detector to be bendably adjusted to match the shape of objects being scanned. This flexible substrate approach maintains structural integrity while providing adaptability for complex geometries, thereby improving detection accuracy without requiring rigid mounting.
Solution Approach 2:
The patent transitions from a static, rigid detector structure to a dynamic, flexible structure that can adapt its shape. The flexible substrate allows the detector to be conformally positioned on various object surfaces, enabling real-time adaptation to different scanning geometries and improving measurement precision for diverse object shapes.
3Adaptability or versatility
If a conventional silicon-based PIN diode is used, then the material is readily available, but the material lacks toughness and cannot adapt to bending
Solution Approach 1:
The patent fundamentally changes the mechanical parameter of the photosensitive material by transitioning from brittle silicon-based PIN diodes to flexible two-dimensional semiconductor materials. This material substitution simultaneously improves both the adaptability to bending and maintains sufficient structural strength for detector operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The two-dimensional semiconductor material-based ray detector achieves higher sensitivity with lower energy sources, reduces costs, and enables accurate, flexible, and convenient detection with adjustable designs for various scanning orientations.
Implementation Method 1
a ray conversion layer for converting a ray incident on the ray detector into visible light
Implementation Method 2
a photoelectric conversion layer for receiving the visible light and converting the visible light into a charge signal
Data Source
AI summary
A ray detector is disclosed, which includes a ray conversion layer for converting a ray incident on the ray detector into visible light, a photoelectric conversion layer for receiving the visible light and converting it into a charge signal, a pixel array having a plurality of pixels for detecting the charge signal, and a substrate below the photoelectric conversion layer, at least for directly or indirectly carrying the photoelectric conversion layer. The photoelectric conversion layer is made from a two-dimensional semiconductor material. Due to the high carrier mobility of the two-dimensional semiconductor material, it is possible to enable the external signal processing system to detect the charge signal more easily, so that a ray source with low energy can be used for ray detection. Therefore, a ray detector with high sensitivity can be provided, which may reduce the usage cost and be advantageous to saving energy.