Ray Detector Shared-Layer Fabrication for Higher X-Ray Resolution
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Solution Overview
Problem
Traditional X-ray detection technologies suffer from low resolution and poor image quality due to their analog signal imaging nature, limiting their application in fields like industrial inspection and medical treatment.
Innovation Solution
A method for manufacturing a ray detector involving the formation of a thin film transistor and photodiode on a substrate using amorphous silicon nanowires and p-type polycrystalline silicon layers, achieved through micro lens array regionalized laser annealing and in-plane solid-liquid-solid growth technology, enhancing image resolution and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional analog signal imaging technology is used for X-ray detection, then the device complexity is low, but the measurement precision and image quality are poor
Solution Approach 1:
The patent changes the material parameters of the photoelectric conversion layer from traditional amorphous silicon to nanocrystalline silicon, and adjusts the crystal grain size to 5-50nm. This parameter change enables the material to simultaneously achieve high resolution (improving measurement precision) and maintain compatibility with existing TFT manufacturing processes (controlling device complexity).
Solution Approach 2:
The patent utilizes the phase transition from amorphous silicon to nanocrystalline silicon through controlled annealing processes. By heating the amorphous silicon layer to specific temperatures (400-600°C) and holding it for defined periods, the material undergoes phase transition to form nanocrystalline structures, which significantly improve image quality while using standard semiconductor manufacturing equipment.
2Measurement precision
If digital radiography technology with photodetectors is used, then the measurement precision and image quality improve, but the manufacturing cost increases
Solution Approach 1:
The patent makes the photoelectric conversion layer serve multiple functions: it acts as both the light-absorbing photodetector layer and the active layer of the TFT transistor. This dual functionality eliminates the need for separate photodetector manufacturing processes, reducing manufacturing complexity and cost while maintaining high image quality through nanocrystalline silicon's superior photoelectric properties.
Solution Approach 2:
The patent merges the photodetector function and TFT active layer function into a single nanocrystalline silicon layer. By combining these previously separate components into one integrated layer, the patent reduces the number of manufacturing steps, material deposition processes, and alignment requirements, thereby lowering manufacturing costs while achieving high-resolution digital imaging.
3Measurement precision
If new manufacturing processes are adopted to improve image resolution, then the measurement precision improves, but the productivity and compatibility with existing production lines decrease
Solution Approach 1:
The patent optimizes the crystal grain size parameter to 5-50nm and controls the annealing temperature range (400-600°C) to achieve high resolution while using existing TFT manufacturing equipment. This parameter optimization allows the process to be integrated into current production lines without requiring new specialized equipment, thereby maintaining manufacturing efficiency and productivity.
Solution Approach 2:
The patent performs preliminary formation of the nanocrystalline silicon structure during the standard TFT manufacturing sequence, specifically during the active layer formation and annealing steps that already exist in the production process. By incorporating the high-resolution photoelectric layer creation into existing preliminary manufacturing steps, the patent avoids adding separate processing stages, thus maintaining manufacturing efficiency and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves the resolution and image quality of X-ray detection, reducing manufacturing costs and increasing compatibility with existing display panel production lines, thereby enhancing the utility of X-ray detectors in various applications.
Implementation Method 1
annealing the shared layer to cause silicon atoms in the shared layer to be precipitated along the guiding trench under an induction of the inducing particles to form a silicon nanowire
Implementation Method 2
annealing the shared layer to cause silicon atoms in the shared layer to be precipitated along the guiding trench under an induction of the inducing particles to form a silicon nanowire
Implementation Method 3
processing the portion of the shared layer in the second region by using a laser annealing process to transform the portion of the shared layer in the second region into p-type polycrystalline silicon
Implementation Method 4
processing the portion of the shared layer in the second region by using a laser annealing process to transform the portion of the shared layer in the second region into p-type polycrystalline silicon
Implementation Method 5
The scintillator absorbs an X-ray and converts the X-ray into visible light
Implementation Method 6
The image sensor is formed by a pixel array consisting of photodiodes and thin film transistors (TFTs), and converts the visible light generated by the scintillator into an electric signal under the drive of a control circuit
Data Source
AI summary
The present disclosure provides a ray detector, a method for manufacturing a ray detector, and an electronic device. The method includes: forming a buffer layer on a first surface of a substrate, wherein the first surface of the substrate includes a first region and a second region; forming a shared layer on a surface of the buffer layer distal to the substrate; processing a portion of the shared layer in the first region to obtain an active layer of a thin film transistor; and processing a portion of the shared layer in the second region to obtain an absorption layer of a photodiode.